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意法半导
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| Part No. |
TMBYV10-60
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| OCR Text |
...ads 110 c/w thermal resistance 1/5
2/5 symbol test conditions min. typ. max. unit i r * t j = 25 c v r = v rrm 0.5 ma t j = 100 ...60
figure 1. forward current versus forward voltage at low level (typical values). figure 2. forwa... |
| Description |
Small Signal Schottky Diode(小信号肖特基二极
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| File Size |
95.14K /
5 Page |
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SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HYM72V8000GS-50 Q67100-Q2085 Q67100-Q2086 HYM72V8000GS-50-
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| OCR Text |
...* * *
Semiconductor Group
1
115.95
HYM72V8000/10GS-50/-60 8M x 72-ECC Module
The HYM 72V8000/10GS-50/-60 is a 64 MByte DRAM module organized as 8 388 608 words by 72bit in a 168-pin, dual read-out, single-in-line package comp... |
| Description |
8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
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| File Size |
84.49K /
11 Page |
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Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HYM64V4045GU-50 Q67100-Q2187 HYM64V4005GU-50 HYM64V4005GU-60 HYM72V4005GU-50 HYM72V4005GU-60 Q67100-Q2184 Q67100-Q2185 Q67100-Q2186
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| OCR Text |
...for PC main memory applications 1 bank 4M x 64, 4M x 72 in 2k and 4k refresh organisations Optimized for byte-write non-parity or ECC applic...60 60 ns 15 ns 30 ns 104 ns 25 ns
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Single +3.3 V 0.3 V Power ... |
| Description |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
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| File Size |
94.87K /
17 Page |
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SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
HYM72V2005GS-60 HYM72V2005GS-50 HYM72V2005GS-50-
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| OCR Text |
...for PC main memory applications 1 bank 2 M x 72 organisation Optimized for ECC applications Extended Data Out (EDO) Performance: -50 tRAC tC...60 60 20 35 104 25 ns ns ns ns ns
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Single + 3.3V 0.3 V supply... |
| Description |
-2M x 72-Bit EDO-DRAM Module
2M x 72-Bit EDO-DRAM Module (ECC - Module)
2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 50 ns, DMA168
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| File Size |
65.27K /
11 Page |
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Infineon
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| Part No. |
HYM328000GD-60 HYM328000GD-50
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| OCR Text |
...t pad
Semiconductor Group
1
12.95
HYM328000GD-50/-60 8M x 32 SO-DIMM
The HYM 328000GD -50/-60 is a 32 MByte DRAM module organized as 8 388 608 words by 32-bit in a 72-pin, dual read-out, small outline package comprising four ... |
| Description |
8M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
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| File Size |
54.21K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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