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  19 0.0147 Datasheet PDF File

For 19 0.0147 Found Datasheets File :: 967    Search Time::1.422ms    
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    PEAK[PEAK electronics GmbH]
Part No. PZ5LU-153R3E PZ5LU-0505E PZ5LU-0512E PZ5LU-0515E PZ5LU-053R3E PZ5LU-1205E PZ5LU-1212E PZ5LU-1215E PZ5LU-123R3E PZ5LU-1505E PZ5LU-1512E PZ5LU-1515E
OCR Text ... condensing Free air convection 19.50 x 6.00 x 9.60 mm 0.76 x 0.24 x 0.37 inches Non conductive black plastic Examples of Partnumbers PART NO. INPUT VOLTAGE (VDC) OUTPUT VOLTAGE (VDC) OUTPUT CURRENT (max. mA) PZ5LU-053R3E PZ5LU-0505E...
Description PZ5LUxxxxE 3 KV ISOLATED 0.75 W UNREGULATED SINGLE OUTPUT SIP7
PZ5LUxxxxE 3 KV ISOLATED 0.75 W UNREGULATED SINGLE OUTPUT SIP7

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    FAIRCHILD[Fairchild Semiconductor]
Part No. PZT2222A MMBT2222A PN2222A PN2222A_04 PN2222ATAR PN2222ATF PN2222ATFR PZT2222ANL PN2222ANLBU
OCR Text ...o 500mA. * Sourced from process 19. Absolute Maximum Ratings * Ta=25C unless otherwise noted Symbol VCEO VCBO VEBO IC TSTG Parameter Col...0 1.0 - 55 ~ 150 Units V V V A C * These ratings are limiting values above which the serviceabili...
Description NPN General Purpose Amplifier

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    PZTA64

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PZTA64
OCR Text ...int CONDITIONS note 1 VALUE 100 19 UNIT K/W K/W 1997 Jun 20 3 Philips Semiconductors Product specification PNP Darlington tra...0; VCB = -30 V VBE = 0; VCE = -30 V IC = 0; VEB = -10 V VCE = -5 V; see Fig.2 IC = -10 mA IC = -100 ...
Description PNP Darlington transistor

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    DELTA[Delta Electronics, Inc.]
Part No. Q48DR3R350NRFA Q48DR1R533NRFA Q48DR1R833NRFA Q48DR2R533NRFA
OCR Text ...COPE RESISTIV LOAD Figure 19: Output voltage noise and ripple measurement test setup Figure 20: Output voltage ripple at nominal in...0.7 at 100 kHz) mounted close to the input of the module to improve the stability. Do not ground on...
Description Delphi Series Q48DR, 87W-100W, Quarter Brick Dual Output, DC/DC Power Modules: 48V in, 1.5V and 3.3V, 15A out each channel

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    DELTA[Delta Electronics, Inc.]
Part No. Q48DV2R533PRFA Q48DV1R033NKFA Q48DV1R033NNFA Q48DV1R033NRFA Q48DV1R033PKFA Q48DV1R033PNFA Q48DV1R033PRFA Q48DV1R233NKFA Q48DV1R233NNFA Q48DV1R233NRFA Q48DV1R233PKFA Q48DV1R233PNFA Q48DV1R233PRFA Q48DV1R533NKFA Q48DV1R533NNFA Q48DV1R533NRFA Q48DV1R533PKFA Q48DV1R533PNFA Q48DV1R533PRFA Q48DV1R833NKFA Q48DV1R833NNFA Q48DV1R833NRFA Q48DV1R833PKFA Q48DV1R833PNFA Q48DV1R833PRFA Q48DV2R533NKFA Q48DV2R533NNFA Q48DV2R533NRFA Q48DV2R533PKFA Q48DV2R533PNFA
OCR Text ...COPE RESISTIV LOAD Figure 19: Output voltage noise and ripple measurement test setup Figure 20: Output voltage ripple at nominal in...0.7 at 100 kHz) mounted close to the input of the module to improve the stability. Do not ground on...
Description    Delphi Series Q48DV, 40W Quarter Brick, Dual Output DC/DC Power Modules

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    Siemens Group
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. Q62702-B916 BBY58-02W BBY5802W
OCR Text ...5 8.6 6 2.15 3.05 0.25 0.09 0.6 19.3 6.6 3.3 - pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 2.8 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacit...
Description From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)

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    SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-C2257 BCR135
OCR Text ...1 R1/R2 50 50 70 0.5 0.5 7 0.19 IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 6 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V...
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
From old datasheet system

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-C2495 BCR35 BCR35PN
OCR Text ...frequency R1 R1/R2 fT 7 0.19 MHz 150 2 pF - IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% Semiconductor Group 2 Nov-26-1996 BCR 35PN N...
Description NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit)
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
From old datasheet system

File Size 63.07K  /  5 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. Q62702-F1049 BFQ81
OCR Text ...max. Unit fT 4.5 5.8 0.39 0.19 0.9 - GHz pF 0.6 dB 1.45 2.2 - IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-b...
Description NPN Silicon RF Transistor for low noi...
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications)

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    SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1189 BFQ82
OCR Text ...5 151.4 147.0 136.2 124.5 22.66 19.20 16.25 13.90 12.07 9.48 7.78 6.57 5.67 5.01 4.45 4.01 3.35 2.90 2.72 2.56 2.28 2.05 1.67 1.42 142.7 130.2 121.0 113.9 108.4 99.9 93.6 88.4 83.8 79.6 76.0 72.5 66.5 60.9 58.1 55.1 49.3 44.2 33.1 20.7 0.02...
Description NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)

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