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  2500v ms Datasheet PDF File

For 2500v ms Found Datasheets File :: 680    Search Time::1.718ms    
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    ST Microelectronics
Part No. TODV1040 TODV1240 TODV640 TODV840
OCR Text ... (400hz) . insulating voltage = 2500v (rms) (ul recognized : eb1734) . high voltage capability : v drm = 1200 v description symbol paramete...ms (dv/dt)c = 10v/ m s142 * for either polarity of electrode a 2 volt age with reference to electro...
Description ALTERNISTORS

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    TODV1025 TODV1225 TODV625 TODV825 TODV826

STMICROELECTRONICS
ST Microelectronics
Part No. TODV1025 TODV1225 TODV625 TODV825 TODV826
OCR Text ... (400hz) . insulating voltage = 2500v (rms) (ul recognized : eb1734) . high voltage capability : v drm = 1200 v description symbol paramete...ms (dv/dt)c = 10v/ m s88 * for either polarity of electrode a 2 volt age with reference to electrod...
Description 1200 V, 25 A, ALTERNISTOR TRIAC
ALTERNISTORS

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    IXFR24N50 IXFR26N50

IXYS Corporation
Part No. IXFR24N50 IXFR26N50
OCR Text ...n - Isolated mounting surface - 2500v electrical isolation * Low drain to tab capacitance(<50pF) * Low RDS (on) HDMOSTM process * Rugged pol...ms, VR = 100 V Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specif...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)

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    STMICROELECTRONICS[STMicroelectronics]
Part No. TODV625 TODV1025 TODV825 TODV1225 TODV625---1225 3200
OCR Text 2500v(Rms) (UL RECOGNIZED : EB1734) GH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 625 ---> 1225 use high performa...ms tp = 8.3 ms tp = 10 ms 390 250 230 265 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/d...
Description From old datasheet system
ALTERNISTORS

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    TXDV408 TXDV608 TXDV808

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. TXDV408 TXDV608 TXDV808
OCR Text 2500v(Rms) (UL RECOGNIZED : E81734) dt : 500 V/s min DESCRIPTION The TXDV 408 ---> 808 use a high performance passivated glass alternisto...ms tp = 8.3 ms tp = 10 ms 115 85 80 32 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt ...
Description    ALTERNISTORS

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    DB Lectro
Part No. NT90H1A NT90H1B
OCR Text ...-2-3 Test Ca 50Hz 1500V 50Hz 2500v 4000V without Pin 6 200m/s2 11ms 10~55Hz double amplitude 1.5mm 10N 235 2 3 0.5s -55~100 -55~125 85% (at 40 ) 27g Open type 30g Qualification inspection: Perform the qualification test as specified ...
Description Suitable

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    ST Microelectronics
Part No. T835-800B-TR BTA08-800BWRG BTA08-800CRG BTB08-800CWRG BTB08-800TWRG BTA08-600SWRG BTA08-600CWRG BTA08-600TWRG BTA08-600BWRG BTA08-600CRG BTA08-600BRG T835-600B-TR T810-600B-TR T810-800B-TR T835-600G-TR BTB08-600BRG BTB08-600TWRG BTB08-600SWRG
OCR Text ...voltage insulated tab (rated at 2500v Rms) complying with UL standards (File ref.: E81734) ABSOLUTE MAXIMUM RATINGS Symbol IT(Rms) Paramete...ms t = 16.7 ms 80 84 36 Tj = 125C Tj = 125C Tj = 125C 50 4 1 - 40 to + 150 - 40 to + 125 Unit ...
Description 8A TRIACS

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    SRC Devices
Part No. msS4 MVS4 DSS4
OCR Text ...ation between input and output (2500v) Optional internal diode & N.C. option High density board mounting Automatic insertion design State-of...ms - Environmental Ratings Storage Temperature Operating Temperature Soldering Temperature Vibra...
Description SIP Series Reed Relays

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    IXFR180N085

IXYS Corporation
Part No. IXFR180N085
OCR Text ...n - Isolated mounting surface - 2500v electrical isolation * Low drain to tab capacitance(<25pF) * Low RDS (on) HDMOSTM process * Rugged pol...ms, VR = 50 V 1.2 10 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 ms, duty cycle ...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)

File Size 33.36K  /  2 Page

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For 2500v ms Found Datasheets File :: 680    Search Time::1.718ms    
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