...6 -55 to 150 2.5 66 C A IRF7807 30 12 8.3 6.6 66 W A IRF7807A Units V
Thermal Resistance Parameter Maximum Junction-to-Ambient
RJA
...33 0.0 0 (12 .9 92 ) MAX.
14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 . C O N T R O L LIN G ...
Description
8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET Chip-Set for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
... PD Symbol VDS VGS ID IRF7811AV 30 20 10.8 11.8 100 2.5 3.0 -55 to 150 2.5 50 C A W A Units V
www.irf.com
1
12/13/00
IRF7811AV
El...33 0.00 (12.992) M AX .
14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SI...
Description
Si, SMALL SIGNAL, FET, MS-012AA N-Channel Application-Specific MOSFETs
...sw Qoss 30V 8.5 m 73 nC 22.5 nC 30 nC IRF7811A 28V 12 m 23 nC 7 nC 31 nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Sou...33 0.0 0 (12 .9 92 ) MAX.
14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 . C O N T R O L LIN G ...
Description
PROVISIONAL DATASHEET Chipset for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
...
Max.
8.0 5.1 28 3.1 125 1.0 30 510 8.0 13 3.5 -55 to + 150 300 (1.6mm from case)
Units
A W W W/C V mJ A mJ V/ns C
Thermal Resista...33 0.00 (1 4.1 73) MA X.
60.00 (2.3 62) MIN .
NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C ...
Description
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
...60 9 ) 15 .2 2 (.60 1 )
2 4 .30 (.9 5 7) 2 3 .90 (.9 4 1)
TR L
1 0. 90 (.4 29 ) 1 0. 70 (.4 21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 1...33 0.0 0 (14. 17 3) M AX .
6 0.0 0 (2 .36 2) M IN .
N O T ES : 1. C O M F O R M S T O EIA -418...
Description
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
...60 9 ) 15 .2 2 (.60 1 )
2 4 .30 (.9 5 7) 2 3 .90 (.9 4 1)
TR L
1 0. 90 (.4 29 ) 1 0. 70 (.4 21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 1...33 0.0 0 (14. 17 3) M AX .
6 0.0 0 (2 .36 2) M IN .
N O T ES : 1. C O M F O R M S T O EIA -418...
Description
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
...60 9 ) 15 .2 2 (.60 1 )
2 4 .30 (.9 5 7) 2 3 .90 (.9 4 1)
TR L
1 0. 90 (.4 29 ) 1 0. 70 (.4 21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 1...33 0.0 0 (14. 17 3) M AX .
6 0.0 0 (2 .36 2) M IN .
N O T ES : 1. C O M F O R M S T O EIA -418...
Description
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)