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				INFINEON[Infineon Technologies AG]
Part No.	CLY32-00 CLY32-05 CLY32-10 CLY32
OCR Text	...nge 3: ID < 250 mA 4) At TS = + 40 C. For TS > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resold...00 CLY32-05 CLY32-10 Output power at 1dB gain compr. 1) VDS = 9 V, ID(RF off) = 380 mA, f = 2.3 GHz ...
Description	Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应 HiRel C-Band GaAs Power-MESFET
File Size	554.40K / 9 Page	View it Online	Download Datasheet

				LIGITEK electronics co., ltd.
Part No.	LBD6118DBK-00
OCR Text	... Intensity@20mA Normalize @25 -40 -20 0 20 40 60 80 100 1.2 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 ...00 Page 6/6 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=10mA ...
Description	BAR DIGIT LED DISPLAY
File Size	106.22K / 7 Page	View it Online	Download Datasheet


Part No.	RJK0329DPB-00-J0
OCR Text	...everse recovery time t rr ? 40 ? ns i f = 55 a, v gs = 0 di f / dt = 100 a/ s body?drain diode reverse recovery charge q rr ...00 apr 10, 2008 page 3 of 6 main characteristics drain to source voltage v ds (v) drain ...
Description	55 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	132.78K / 9 Page	View it Online	Download Datasheet

				http:// Alpha Industries Inc ALPHA[Alpha Industries] Alpha Industries, Inc.
Part No.	AA035N1-00 AA035N2-00
OCR Text	...12 10 8 Gain 80 60 Noise Figure 40 20 ID 0 -0.4 -0.3 -0.2 -0.1 0 -10 -20 S22 -30 -40 -50 30 32 34 36 38 40 S12 S11 120 100 Drain Current ...00, AA035N2-00 Circuit Schematic G D Detail A VG VD G RF IN D GD RF OUT SEE DETA...
Description	286 GHz GaAs MMIC Low Noise Amplifier 28-36 GHz GaAs MMIC Low Noise Amplifier GT 12C 6#12 6#12 PIN PLUG
File Size	171.61K / 3 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK03A4DPA-00-J53
OCR Text	...pation Drain Current s 40 10 1 ms Operation in 20 1 limited by RDS(on) Tc = 25C 0 50 100 150 200 ...00 Sep 29, 2009 Page 3 of 6 RJK03A4DPA Static Drain to Source on State Resistance vs. Temperatu...
Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
File Size	236.59K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK03E0DNS-00-J5
OCR Text	...Power vs. Temperature Derating 40 1000 Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 30 100 ...00 Apr 06, 2010 Page 3 of 6 RJK03E0DNS Static Drain to Source on State Resistance vs. Tempera...
Description	30 A, 30 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN FREE AND LEAD FREE, HWSON-8 Silicon N Channel Power MOS FET Power Switching
File Size	135.12K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK03E1DNS-00-J5
OCR Text	... 30 Drain Current ID (A) 40 40 30 20 2.8 V 20 10 10 Tc = 75C 25C -25C VGS = 2.6 V 0 2 4 6 8 10 0 1 2 3...00 Apr 06, 2010 Page 3 of 6 RJK03E1DNS Static Drain to Source on State Resistance vs. Tempera...
Description	Silicon N Channel Power MOS FET Power Switching
File Size	144.59K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK0381DPA-00-J53
OCR Text	...te3 ch-C Tch Tstg Ratings 30 20 40 160 40 17 28.9 45 2.78 150 -55 to +150 Unit V V A A A A mJ W C/W C C REJ03G1829-0200 Rev.2.00 Sep 29, 2009 Page 1 of 6 RJK0381DPA Preliminary Electrical Characteristics (Ta = 25C) Item Drain...
Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching 40 A, 30 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK-8
File Size	237.97K / 7 Page	View it Online	Download Datasheet

				http:// LEDtronics, Inc. Renesas Electronics Corporation
Part No.	RJK1536DPN-00-02 RJK1536DPN-15
OCR Text	...00 70 50 25 0 50 100 150 200 50 40 30 20 10 0 246810 50 40 30 20 10 0 12345 channel dissipation pch (w) case temperature tc (c) power ...00 page 4 of 6 jun 30, 2010 60 50 40 30 20 ? 25 0 25 50 75 100 125 150 10 0.1 100 1000 10 100...
Description	N-Channel Power MOSFET High-Speed Switching Use 50 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB SC-46, 3 PIN
File Size	75.54K / 7 Page	View it Online	Download Datasheet

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