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  5.5-9ghz Datasheet PDF File

For 5.5-9ghz Found Datasheets File :: 807    Search Time::1.75ms    
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    Sanyo
Part No. 2SC4407
OCR Text ...V, f=1MHz VCB=10V, f=1MHz 40* 1.5 3.0 0.7 0.45 1.0 Conditions Ratings min typ max 0.1 10 200* GHz pF pF Unit A A * : The 2SC4407 is classified by 5mA hFE as follows : (Note) Marking : KY hFE rank : 2, 3, 4 * For CP package version, use t...
Description NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator Applications

File Size 104.55K  /  5 Page

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    CXG7001FN

SONY[Sony Corporation]
Part No. CXG7001FN
OCR Text ... Low current consumption: IDD = 5.5mA Typ. (When no signal) * High conversion gain: Gc = 20.5dB Typ. (f = 1.9GHz) * Low distortion: Input IP3 = -13dBm Typ. (f = 1.9GHz) * High image suppression ratio: IMR = 40dBc Typ. (f = 1.9GHz) * High 1/...
Description Power Amplifier/Antenna Switch Low Noise Down Conversion Mixer for PHS

File Size 115.10K  /  8 Page

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    FLM3439-12 FLM3439-12F

List of Unclassifed Manufacturers
ETC[ETC]
N.A.
Part No. FLM3439-12 FLM3439-12F
OCR Text ...h Tc = 25C Condition Rating 15 -5 57.6 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The for...
Description C-Band Internally Matched FET

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    Sanyo
Part No. 2SC4404
OCR Text ...s * High cutoff frequency : fT=5.0GHz typ * High power gain : MAG=14dB typ (f=0.9GHz) * Small noise figure : NF=2.2dB typ (f=0.9GHz) * Very small-sized package permitting 2SC4404applied sets to be made smaller and slimmer. 1.250 2.1 ...
Description NPN Epitaxial Planar Silicon Transistor UHF Local Oscillator, Wide-Band Amplifier Applications

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    Q62702-F1377 BFP180

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1377 BFP180
OCR Text ...ion Symbol Values 8 10 10 2 4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 875 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 124 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Juncti...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
From old datasheet system

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    KGF1531

OKI electronic componet...
OKI electronic componets
OKI electronic eomponets
Part No. KGF1531
OCR Text ... 3rd-order intercept point = 12.5 dBm (typ.) at 1.9 GHz * Self-bias circuit configuration with built-in source capacitor * Package: 4PSOP PACKAGE DIMENSIONS 1.80.1 0.850.05 0.6 +0.1 -0.05 0.4 +0.1 -0.05 1.10.15 0.36 0.74 3.00.2 1...
Description Small-Signal Amplifier
From old datasheet system

File Size 114.86K  /  8 Page

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    MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T

MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
Part No. MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T
OCR Text ...perates from a single +2.7V to +5.25V* power supply and is specified over the extended -40C to +85C temperature range. The MAX2016 is available in a space-saving, 5mm x 5mm, 28-pin thin QFN. Features Complete Gain and VSWR Detector/Con...
Description 2.7 V to 5.25 V, LF-to-2.5 GHz dual logarithmic detector/controller for power, gain, and VSWR measurement
LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements
LF-to-2.5GHz Dual Logarithmic Detector/Controller for Power, Gain, and VSWR Measurements

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    Q62702-F1490 BFR180W

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1490 BFR180W
OCR Text ...ion Symbol Values 8 10 10 2 4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 790 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 126 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Juncti...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system

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    Sanyo
Part No. 2SA1669 0112
OCR Text ...GHz VCE=-10V, IC=-3mA, f=0.9GHz 5.0 11 2.0 15 1.5 3.0 1.0 0.7 1.5 GHz pF pF dB dB dB Conditions Ratings min typ max -0.1 -0.1 Unit A A Note) Marking : DB Any and all SANYO products described or contained herein do not have specificati...
Description PNP Epitaxial Planar Silicon Transistor High-Frequency Amplifier Applications
From old datasheet system

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    BFS482 Q62702-F1573

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS482 Q62702-F1573
OCR Text ... 482 RGs Q62702-F1573 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector ...
Description NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.)
From old datasheet system

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For 5.5-9ghz Found Datasheets File :: 807    Search Time::1.75ms    
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