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PE44263 NTE1561 ATP104 C1455 1N4742 DM74L 2SC6034 2000A
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  60v 10a Datasheet PDF File

For 60v 10a Found Datasheets File :: 2244    Search Time::4.328ms    
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    TIP140

Inchange Semiconductor Company Limited
Part No. TIP140
OCR Text ...Sustaining Voltage: VCEO(SUS) = 60v(Min) *Complement to Type TIP145 APPLICATIONS *Designed for general purpose amplifier and low frequency s...10a ,IB= 40mA IC= 10a ,IB= 40mA IC= 10a ; VCE= 4V VCB= 60v, IE= 0 VCE= 30V, IB= 0 VEB= 5V; IC= 0 IC=...
Description isc Silicon NPN Darlington Power Transistor

File Size 77.70K  /  2 Page

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    PMD1601K

Inchange Semiconductor Company Limited
Part No. PMD1601K
OCR Text ...breakdown voltage- v (br)ceo = 60v(min) complement to type pmd1701k applications designed for general purpose amplifier and low f...10a; i b = 40ma 2.0 v v be (sat) base-emitter saturation voltage i c = 10a; i b = 40ma 2.8 ...
Description isc Silicon NPN Darlingtion Power Transistor

File Size 49.79K  /  2 Page

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    IRFZ14S

International Rectifier
Part No. IRFZ14S
OCR Text ...e Fast Switching D VDSS = 60v RDS(on) = 0.20 G ID = 10a Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ben...
Description HEXFET? POWER MOSFET

File Size 230.85K  /  10 Page

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    POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
Part No. FS10aSJ-06
OCR Text .................................. 60v rDS (ON) (MAX) ............................................................. 70m ID .......................10a Integrated Fast Recovery Diode (TYP.) ............ 55ns q MP-3 APPLICATION Motor contro...
Description ER 2C 2#16 PIN RECP LINE
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 42.31K  /  4 Page

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    Fairchild Semiconductor Corporation
Part No. IRFWZ14
OCR Text ...rent: 10 m a (max.) @ v ds = 60v lower r ds(on) : 0.097 w (typ.) $gydqfhg 3rzhu 026)(7 thermal resistance junction-to-case junction...10a, v dd =25v, r g =27 w , starting t j =25 c (3) i sd 10a, di/dt 200a/ m s, v dd bv ds...
Description 60v N-Channel Power MOSFET(漏源电压0V的N沟道增强型功率MOS场效应管)

File Size 226.64K  /  7 Page

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    Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS10VSJ-06
OCR Text .................................. 60v rDS (ON) (MAX) .............................................................. 70m ID ......................10a Integrated Fast Recovery Diode (TYP.) ............. 55ns q q GATE w DRAIN e SOURCE r DRAIN...
Description BANANA PLUG, GRN 高速开关使
HIGH-SPEED SWITCHING USE

File Size 37.97K  /  4 Page

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    Z3PK1060DH

Zowie Technology Corporation
Part No. Z3PK1060DH
OCR Text 60v / 10a) z3pk1060dh schottky barrier diode * halogen-free type * lead free product, compliance to rohs * lead less chip form, no lead damage * low power loss, high efficiency * high current capability, low vf * plastic package has u...
Description Schottky Barrier Diode

File Size 59.03K  /  2 Page

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    Z3PK1060H

Zowie Technology Corporation
Part No. Z3PK1060H
OCR Text 60v / 10a) z3pk1060h un i t : mm schottky barrier diode * halogen-free type * lead free product, compliance to rohs * lead less chip form, no lead damage * low power loss, high efficiency * high current capability, low vf * plastic ...
Description Schottky Barrier Diode

File Size 59.06K  /  2 Page

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    FS10KM-06

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS10KM-06
OCR Text .................................. 60v rDS (ON) (MAX) .............................................................. 78m ID ......................10a Integrated Fast Recovery Diode (TYP.) ............. 55ns Viso .....................................
Description HIGH-SPEED SWITCHING USE

File Size 40.19K  /  4 Page

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    FS10KMJ-06

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS10KMJ-06
OCR Text .................................. 60v rDS (ON) (MAX) ............................................................. 70m ID .......................10a Integrated Fast Recovery Diode (TYP.) ............ 55ns Viso ......................................
Description HIGH-SPEED SWITCHING USE

File Size 41.51K  /  4 Page

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For 60v 10a Found Datasheets File :: 2244    Search Time::4.328ms    
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