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  dqs Datasheet PDF File

For dqs Found Datasheets File :: 3535    Search Time::1.921ms    
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    HYMD212G726AMS4M-H

Hynix Semiconductor
Part No. HYMD212G726AMS4M-H
OCR Text ... differential clock inputs vddq dqs power supply cs0 chip select input vss ground cke0 clock enable input vref reference power supply /ras, /cas, /we commend sets inputs vddspd power supply for spd a0 ~ a12 address sa0~sa2 e 2 prom address ...
Description Low Profile Registered DDR SDRAM DIMM

File Size 262.11K  /  16 Page

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    W941232AD

Winbond
Part No. W941232AD
OCR Text ...hronized with the both edges of dqs (Data Strobe). By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W941232AD is ideal for main memory in ...
Description 128Mb DDR

File Size 528.07K  /  29 Page

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    ICSI
Part No. IC43R16800
OCR Text ...DR) Bidirectional Data Strobe (dqs) for input and output data, active on both edges On-Chip DLL aligns DQ and dqs transitions with CK transitions Differential clock inputs CK and CK Features The ICSI IC43R16800 is a four bank DDR D...
Description DYNAMIC RAM

File Size 1,292.28K  /  56 Page

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    Samsung Electronics Inc
Part No. K4D623238B-QC45
OCR Text ...Data strobe * DLL aligns DQ and dqs transitions with Clock transition * Edge aligned data & data strobe output * Center aligned data & data strobe input * DM for write masking only * Auto & Self refresh * 16ms refresh period (2K cycle) * 10...
Description IC,SDRAM,DDR,4X512KX32,CMOS,TQFP,100PIN,PLASTIC

File Size 147.89K  /  17 Page

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    K4H560838F K4H561638F-UCCC K4H561638F-UCC4 K4H560838F-UC K4H560838F-UCC4 K4H560838F-UCCC

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4H560838F K4H561638F-UCCC K4H561638F-UCC4 K4H560838F-UC K4H560838F-UCC4 K4H560838F-UCCC
OCR Text ...cle * Bidirectional data strobe(dqs) * Four banks operation * Differential clock inputs(CK and CK) * DLL aligns DQ and dqs transition with CK transition * MRS cycle with address key programs -. Read latency 3 (clock) for DDR400 , 2.5 (clock...
Description 256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格

File Size 168.93K  /  19 Page

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    Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
Part No. CY7C1350F CY7C1350F-100AC CY7C1350F-100AI CY7C1350F-100BGI CY7C1350F-100BGC CY7C1350F-225AI CY7C1350F-225BGI CY7C1350F-250BGI CY7C1350F-133AC CY7C1350F-133AI CY7C1350F-133BGC CY7C1350F-133BGI CY7C1350F-166AC CY7C1350F-166AI CY7C1350F-166BGC CY7C1350F-166BGI CY7C1350F-200AC CY7C1350F-200AI CY7C1350F-200BGC CY7C1350F-200BGI CY7C1350F-225AC CY7C1350F-225BGC CY7C1350F-250AC CY7C1350F-250AI CY7C1350F-250BGC
OCR Text ...O U T P U T B U F F E R S E dqs DQPA DQPB DQPC DQPD E INPUT REGISTER 1 E INPUT REGISTER 0 E OE CE1 CE2 CE3 ZZ READ LOGIC SLEEP CONTROL Note: 1. For best-practices recommendations, please refer to the Cypress ...
Description 4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 4.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PBGA119
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.6 ns, PQFP100
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, PE-SR047FL (.047" RE-SHAPABLE) 128K X 36 ZBT SRAM, 3.5 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl Architecture 128K X 36 ZBT SRAM, 2.8 ns, PQFP100
4-Mb (128K x 36) Pipelined SRAM with Nobl(TM) Architecture

File Size 391.04K  /  16 Page

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    K4T1G044QA K4T1G164QA-ZCD5 K4T1G164QA-ZCE6 K4T1G044QA-ZCD5 K4T1G044QA-ZCE6 K4T1G084QA-ZCD5 K4T1G084QA-ZCE6

SAMSUNG[Samsung semiconductor]
Part No. K4T1G044QA K4T1G164QA-ZCD5 K4T1G164QA-ZCE6 K4T1G044QA-ZCD5 K4T1G044QA-ZCE6 K4T1G084QA-ZCD5 K4T1G084QA-ZCE6
OCR Text ... pair of bidirectional strobes (dqs and dqs) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. For example, 1Gb(x4) device receive 14/ 11/3 address...
Description 1Gb A-die DDR2 SDRAM Specification

File Size 608.51K  /  28 Page

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    M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
Part No. M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
OCR Text ... on-die termination for DQ, DM, dqs, and dqs signals if enabled via the DDR2 SDRAM Extended Mode Register Set (EMRS). During a Bank Activate command cycle, defines the row address when sampled at the cross point of the rising edge of CK and...
Description 40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes

File Size 325.20K  /  19 Page

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For dqs Found Datasheets File :: 3535    Search Time::1.921ms    
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