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意法半导
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| Part No. |
SGSIF461
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| OCR Text |
hollow-emitter npn transistor n very high switching speed n npn transistor n low base-drive requirements applications: n switch mode power supplies description ... |
| Description |
Fast-Switch hollow-emitter NPN Transistor(快速开关空射极NPN晶体
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| File Size |
67.03K /
4 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
BUH1015HI
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| OCR Text |
...ive high performance and uses a hollow emitter structure to enhance switching speeds. the buh series is designed for use in horizontal deflection circuits in televisions and monitors. internal schematic diagram april 2002 absolute maximum r... |
| Description |
HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR
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| File Size |
74.64K /
7 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
BUH715
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| OCR Text |
...ive high performance and uses a hollow emitter structure to enhance switching speeds. . internal schematic diagram october 1995 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 1500 v v ceo collect... |
| Description |
HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR
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| File Size |
95.50K /
7 Page |
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it Online |
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ST Microelectronics
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| Part No. |
BU508DFI
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| OCR Text |
...ive high performance and uses a hollow emitter structure to enhance switching speeds. internal schematic diagram april 2002 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 1500 v v ceo c... |
| Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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| File Size |
413.28K /
6 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN509
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| OCR Text |
...ct and reduced switching times. hollow emitter and cellular etd technologies has been developed for this purpose. if an negative base-emitter voltage of 2.5 volts is applied, the fall time is reduced to less than 50ns, see oscillogram 2. 5/... |
| Description |
INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR
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| File Size |
81.25K /
11 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
ISOWATT218
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| OCR Text |
...ive high performance and uses a hollow emitter structure to enhance switching speeds. internal schematic diagram december 1999 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be =0) 1500 v v ceo colle... |
| Description |
HIGH VOLTAGE FAST-SWITCHING, NPN POWER TRANSISTOR
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| File Size |
59.70K /
6 Page |
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it Online |
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ST Microelectronics
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| Part No. |
BUH515D
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| OCR Text |
...ive high performance and uses a hollow emitter structure to enhance switching speeds. the buh series is designed for use in horizontal deflection circuits in televisions and monitors. internal schematic diagram july 2002 absolute maxim... |
| Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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| File Size |
224.61K /
7 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
BUH515
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| OCR Text |
...ve high performance and uses a hollow emitter structure to enhance switching speeds. the buh series is designed for use in horizontal deflection circuits in televisions and monitors. internal schematic diagram july 2002 absolute maxi... |
| Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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| File Size |
293.26K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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