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  idss Datasheet PDF File

For idss Found Datasheets File :: 28427    Search Time::1.204ms    
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    Vishay Intertechnology,Inc.
Part No. ND2012L ND2020L 70197
OCR Text ...125_C Drain-Saturation Currentc idss VDS = 10 V, VGS = 0 V VGS = 2 V, ID = 20 mA Drain-Source On-Resistancec rDS(on) VGS = 0 V, ID = 20 mA TJ = 125_C Forward Transconductance c Common Source Output Conductancec gfs gos VDS = 7 5 V ID = 20 m...
Description N-Channel Depletion-Mode MOSFET Transistors(最大漏源导通电2Ω,夹断电.16A的N沟道耗尽型MOSFET晶体
From old datasheet system

File Size 63.79K  /  4 Page

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    EMP107-Q5

Excelics Semiconductor, Inc.
Part No. EMP107-Q5
OCR Text ...ch tone pout 14dbm, 7v, 60%+ 10%idss -40 -37 dbc input rl input return loss -10 db output rl output return loss -5 db idss saturate drain current v ds =3v, v gs =0v 240 310 370 ma v dd ...
Description 5.8 - 8.0 GHz Surface-Mounted PA

File Size 135.75K  /  4 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BF999 Q62702-F1132
OCR Text ...= 10 V, ID = 20 A nA mA V idss - VGS (p) AC Characteristics Forward transconductance VDS = 10 V, ID = 10 mA, f = 1 kHz Gate input capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Reverse transfer capacitance VDS = 10 V, ID = 10 mA, f ...
Description Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz/ preferably in FM applications)
From old datasheet system
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)

File Size 116.19K  /  5 Page

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    2SJ163

PANASONIC[Panasonic Semiconductor]
Part No. 2SJ163
OCR Text ... to Source ON-resistance Symbol idss* IGSS VGDS VGSC | Yfs | RDS(on) Conditions VDS = -10V, VGS = 0 VGS = 30V, VDS = 0 IG = 10A, VDS = 0 VDS = -10V, ID = -10A VDS = -10V, ID = -1mA, f = 1kHz VDS = -10mV, VGS = 0 VDS = -10V, VGS = 0, f = 1MH...
Description Silicon P-Channel Junction FET

File Size 30.72K  /  2 Page

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    2SJ164

PANASONIC[Panasonic Semiconductor]
Part No. 2SJ164
OCR Text ... to Source ON-resistance Symbol idss* IGSS VGDS VGSC | Yfs | RDS(on) Coss Conditions VDS = -10V, VGS = 0 VGS = 30V, VDS = 0 IG = 10A, VDS = 0 VDS = -10V, ID = -10A VDS = -10V, ID = -1mA, f = 1kHz VDS = -10mV, VGS = 0 VDS = -10V, VGS = 0, f ...
Description Silicon P-Channel Junction FET

File Size 30.13K  /  2 Page

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    Excelics Semiconductor
Part No. EIA1011-4P
OCR Text ....7 - 11.7ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 35.5 36.5 35 35.5 dbm g 1db gain at 1db compression f =10.7 - 11.7ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 8 9 7 8 db pae powe...
Description 10.7-11.7GHz 4W Internally Matched Power FET

File Size 43.89K  /  1 Page

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    J112_D ON0286 J112

MOTOROLA INC
Motorola, Inc.
Motorola Inc
ON Semiconductor
Part No. J112_D ON0286 J112
OCR Text ...dth = 300 s, Duty Cycle = 3.0%. idss rDS(on) Cdg(on) + Csg(on) Cdg(off) Csg(off) 5.0 -- -- -- 50 28 mAdc pF -- -- 5.0 5.0 pF pF (Replaces J111/D) Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, I...
Description JFET CHOPPER TRANSISTOR (N-CHANNEL- DEPLETION)
From old datasheet system
CASE 29-4, STYLE 5 TO-2 (TO-26AA)

File Size 109.37K  /  4 Page

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    MOTOROLA[Motorola, Inc]
ON Semi
Part No. MMDF3C03HD_D ON2176 MMDF3C03HD
OCR Text ...igh Speed, With Soft Recovery * idss Specified at Elevated Temperature * Mounting Information for SO-8 Package Provided MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage Drain Current -...
Description Medium Power Surface Mount Products
From old datasheet system
COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

File Size 271.04K  /  12 Page

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    MMSF3350-D

ON Semiconductor
Part No. MMSF3350-D
OCR Text ...igh Speed, With Soft Recovery * idss Specified at Elevated Temperature * Avalanche Energy Specified * Miniature SO-8 Surface Mount Package - Saves Board Space SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 11 mW D G S MARKING DIAGRAM...
Description WaveFETE HDTMOSE Single N-Channel Field Effect Transistor Power Surface Mount Products

File Size 137.16K  /  12 Page

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    Vishay
Part No. P1086 70259
OCR Text ...ating Current V(BR)GSS VGS(off) idss IGSS IG IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -1 mA VDS = -20 V, VGS = 0 V VGS = 15 V, VDS = 0 V TA = 85_C VDG = -15 V, ID = -1 mA VGS = 12 V D i C ff Current Drain Cutoff C ID(off) VDS = -15 V 15 VGS ...
Description P-Channel JFET
From old datasheet system

File Size 71.32K  /  5 Page

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For idss Found Datasheets File :: 28427    Search Time::1.204ms    
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