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IRF[International Rectifier]
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Part No. |
IRHNA7360SE
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OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can... |
Description |
TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A)
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File Size |
105.14K /
4 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRHNA7264SE
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OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can... |
Description |
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A)
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File Size |
98.87K /
4 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRHN9150
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OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier's P-channel RAD HARD HEXFETs has d... |
Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.120ohm, Id=-22A)
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File Size |
81.76K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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