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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDD6030L FDD6030
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OCR Text |
...EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum Typical component cavity center line
0.9mm maximum
B0 10 deg maximum component rotation
0.9mm maximum
Sketch A (Side or Fr... |
Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 50 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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File Size |
167.82K /
6 Page |
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it Online |
Download Datasheet |
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Freescale (Motorola)
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Part No. |
MRF9060MR1
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OCR Text |
... n ? channel enhancement ? mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1000 mhz. the high gain and broadband performance of these devices make them ideal for large ? signal, c... |
Description |
945 MHz, 60 W, 26 V lateral N–Channel Broadband RF Power MOSFET
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File Size |
263.40K /
12 Page |
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it Online |
Download Datasheet |
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Motorola
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Part No. |
MRF6S21100H MOTOROLAINC-MRF6S21100HSR3
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OCR Text |
...
N - Channel Enhancement - Mode lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B ... |
Description |
2170 MHz, 23 W Avg., 28 V, 2 x W?CDMA lateral N?Channel RF Power MOSFET
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File Size |
406.27K /
12 Page |
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it Online |
Download Datasheet |
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Freescale Semiconductors
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Part No. |
MRF6S21100NBR1 MRF6S21100N
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OCR Text |
...
N - Channel Enhancement - Mode lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f... |
Description |
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz
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File Size |
510.14K /
12 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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