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For methodology Found Datasheets File :: 1449    Search Time::0.719ms    
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    MRF8S9202N

Freescale Semiconductor, Inc
Part No. MRF8S9202N
OCR Text ... to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf8s9202n rev. 0, 12/2010 freescale semiconductor technical data 920...
Description RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET

File Size 644.74K  /  13 Page

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    MRF6VP41KHR6 MRF6VP41KHSR6

Freescale Semiconductor, Inc
Part No. MRF6VP41KHR6 MRF6VP41KHSR6
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics...
Description RF Power Field Effect Transistors

File Size 516.19K  /  13 Page

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    CB45000 CB45000SERIES 5813 CB45000-SERIES

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
Part No. CB45000 CB45000SERIES 5813 CB45000-SERIES
OCR Text ...tions. DRAM integration in ASIC methodology Extensive embedded function library including ST DSP and micro cores, third party micros and Synopsys synthetic libraries. Fully independent power and ground configurations for inputs, core and ou...
Description From old datasheet system
HCMOS6 STANDARD CELLS

File Size 264.34K  /  16 Page

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    MD8IC970NR1

Freescale Semiconductor, Inc
Part No. MD8IC970NR1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1A (Minimum) A (Minimum) I (Minimum) Table 4. Moisture Sensitivity Level T...
Description RF LDMOS Wideband Integrated Power Amplifier

File Size 399.75K  /  14 Page

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    MRF5S9080NR1

Freescale Semiconductor, Inc
Part No. MRF5S9080NR1
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S9080NR1 MRF5S90...
Description RF Power Field Effect Transistors

File Size 735.46K  /  20 Page

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    MRF8S9170NR310

Freescale Semiconductor, Inc
Part No. MRF8S9170NR310
OCR Text ... to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: mrf8s9170n rev. 1, 5/2010 freescale semiconductor technical data 920-...
Description RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

File Size 455.97K  /  13 Page

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    MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1

FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF5S21045 MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reason...
Description RF Power Field Effect Transistors

File Size 512.68K  /  12 Page

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    MRFG35003N6AT1

Freescale Semiconductor, Inc
Part No. MRFG35003N6AT1
OCR Text ...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level...
Description Gallium Arsenide PHEMT RF Power Field Effect Transistor

File Size 213.06K  /  11 Page

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    MRFE6S9045NR1 CRCW12061001FKEA ATC100B470JT500XT 2743021447 2743019447 ATC100B120JT500XT ATC100B130JT500XT ATC100B150JT5

Freescale Semiconductor, Inc
Part No. MRFE6S9045NR1 CRCW12061001FKEA ATC100B470JT500XT 2743021447 2743019447 ATC100B120JT500XT ATC100B130JT500XT ATC100B150JT500XT ATC100B7R5JT500XT CRCW120656001FKEA CRCW120612R0FKEA EMVY500ADA221MJA0G 27291SL T491D106K035AT
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007. All rights reserved. MRFE6S9045NR1 1 R...
Description RF Power Field Effect Transistor

File Size 564.30K  /  15 Page

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    MD7IC2755GNR1 MD7IC2755NR1

Freescale Semiconductor, Inc
Part No. MD7IC2755GNR1 MD7IC2755NR1
OCR Text ...protection characteristics test methodology class human body model (per jesd22--a114) 1c (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iii (minimum) table 4. moisture sensitivity level tes...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 1,021.52K  /  22 Page

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For methodology Found Datasheets File :: 1449    Search Time::0.719ms    
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