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Rohm Co., Ltd. ROHM[Rohm]
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Part No. |
QS6M4
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OCR Text |
...
Structure Silicon P-channel MOS FET Silicon N-channel MOS FET
Equivalent circuit
(6) (5) 1 (4)
0.85
2.9
(2)
(5)
Packa...Transistors
N-ch Electrical characteristics (Ta=25C)
Parameter Symbol Min. - 30 - 0.5 - - - 1.0 - ... |
Description |
Small switching 小开
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File Size |
73.32K /
6 Page |
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it Online |
Download Datasheet |
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Supertex
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Part No. |
VP2206
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OCR Text |
...ature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally...transistors, etc.) features ? free from secondary breakdown ? low power drive requirement ? ease of ... |
Description |
P-Channel Enhancement Mode Vertical DMOS FETs
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File Size |
483.32K /
4 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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Part No. |
CA3420_05 CA3420 CA3420E CA3420EZ
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OCR Text |
...e) PKG. DWG. # E8.3 E8.3
X1
MOS BIPOLAR + MOS BIPOLAR
*Pb-free PDIPs can be used for through hole wave solder processing only. They are not intended for use in Reflow solder processing applications. NOTE: Intersil Pb-free plus anneal... |
Description |
0.5MHz, Low Supply Voltage, Low Input Current BiMOS Operational Amplifier
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File Size |
212.34K /
5 Page |
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it Online |
Download Datasheet |
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Supertex Inc
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Part No. |
VN4012L
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OCR Text |
...ature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally...transistors, etc.) n-channel enhancement-mode v ertical dmos fets package option note: see package ... |
Description |
N-Channel Enhancement-Mode Vertical DMOS FETs
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File Size |
438.88K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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