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For vgs Found Datasheets File :: 34613    Search Time::1.11ms    
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    2N7002LT1 ON0106

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
http://
Part No. 2N7002LT1 ON0106
OCR Text ...0 s) Symbol VDSS VDGR ID ID IDM vgs vgsM Value 60 60 115 75 800 20 40 Unit Vdc Vdc mAdc 1 2 CASE 318 - 08, STYLE 21 SOT- 23 (TO - 236AB) Vdc Vpk THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(3...
Description CASE 318-08, STYLE 21 SOT-23 (TO-236AB) 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
From old datasheet system

File Size 92.99K  /  6 Page

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    2N7002LT3 2N7002LT1 L2N7003LT1

http://
LRC[Leshan Radio Company]
Leshan Radio Company, Ltd.
Part No. 2N7002LT3 2N7002LT1 L2N7003LT1
OCR Text ... STYLE 21 SOT- 23 (TO-236AB) vgs vgsM 20 40 Vdc Vpk 115 mAMPS 60 VOLTS R DS(on) = 7.5 W N - Channel 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 3.) TA = 25C Derate above 25C Thermal Re...
Description Small Signal MOSFET 115 mAmps 60 Volts
Small Signal MOSFET 115 mAmps/ 60 Volts
Small Signal MOSFET 115 mAmps, 60 Volts 小信号MOSFET 115 mAmps0伏特

File Size 142.51K  /  3 Page

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    2N7002L 2N7002LT1G 2N7002LT3G 2N7002LT3 2N7002LT1

ONSEMI[ON Semiconductor]
http://
Part No. 2N7002L 2N7002LT1G 2N7002LT3G 2N7002LT3 2N7002LT1
OCR Text ...N-Channel 3 ID MAX 115 mA vgs vgsM 20 40 Vdc Vpk 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating con...
Description Small Signal MOSFET 115 mA, 60 Volts
Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23
Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
Small Signal MOSFET 60 V 115 mA N−Channel SOT−23

File Size 58.74K  /  4 Page

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    2N7002T

DIODES[Diodes Incorporated]
Part No. 2N7002T
OCR Text ... TC = 25C @ TC = 125C IDSS IGSS vgs(th) @ Tj = 25C @ Tj = 125C RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 3/4 3/4 1.0 3/4 0.5 80 3/4 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 2.0 4.4 1.0 3/4 22 11 2.0 7.0 11 Max 3/4 1.0 500 10 2.0 7...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 83.69K  /  3 Page

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    2N7002V 2N7002V-7 2N7002VA-7

Diodes Inc.
DIODES[Diodes Incorporated]
Part No. 2N7002V 2N7002V-7 2N7002VA-7
OCR Text ... TC = 25C @ TC = 125C IDSS IGSS vgs(th) RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 3/4 3/4 1.0 3/4 3/4 0.5 80 3/4 3/4 3/4 3/4 3/4 Typ 70 3/4 3/4 3/4 3/4 3/4 1.0 3/4 3/4 3/4 3/4 3/4 3/4 Max 3/4 1.0 500 100 2.5 7.5 13.5 3/4 3/4 ...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 67.17K  /  3 Page

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    2N7002W

Diodes Inc.
DIODES[Diodes Incorporated]
Part No. 2N7002W
OCR Text ... TC = 25C @ TC = 125C IDSS IGSS vgs(th) @ Tj = 25C @ Tj = 125C RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 3/4 3/4 1.0 3/4 0.5 80 3/4 3/4 3/4 3/4 3/4 Typ 70 3/4 3/4 3/4 3.2 4.4 1.0 3/4 22 11 2.0 7.0 11 Max 3/4 1.0 500 10 2.0 7....
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 67.04K  /  3 Page

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    2N7002

PANJIT[Pan Jit International Inc.]
Part No. 2N7002
OCR Text ...verse BVDSS I DSS I GSSF I GSSR vgs=0V, ID=10A VDS=60V, vgs=0V, TJ=25OC VDS=60V, vgs=0V, TJ=125OC VDS=0V, vgs=20V VDS=0V, vgs= -20V 60 1.0 0.5 100 -100 V A mA nA nA ON CHARACTERISTICS (note1) Gate Threshold Voltage Static Drain-Source O...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 88.00K  /  6 Page

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    2SJ117

HITACHI[Hitachi Semiconductor]
Part No. 2SJ117
OCR Text ...V Test conditions I D = -10 mA, vgs = 0 vgs = 20 V, VDS = 0 VDS = -320 V, vgs = 0 I D = -1 mA, VDS = -10 V I D = -1 A, vgs = -15 V*1 S pF pF pF ns ns ns ns V ns I F = -1 A, vgs = 0 I F = -1 A, vgs = 0, diF/dt = 100 A/s I D = -2 A, vgs = -15...
Description Silicon P-Channel MOS FET

File Size 17.38K  /  3 Page

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    2SJ130 2SJ130L 2SJ130S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ130 2SJ130L 2SJ130S
OCR Text ...pF ns ns ns ns V ns I F = -1 A, vgs = 0 I F = -1 A, vgs = 0, diF/dt = 50 A/s I D = -0.5 A, vgs = -10 V, RL = 60 Test conditions I D = -10 mA, vgs = 0 I G = 100 A, VDS = 0 vgs = 16 V, VDS = 0 VDS = -240 V, vgs = 0 I D = -1 mA, VDS = -10 V I...
Description Power switching MOSFET
Silicon P-Channel MOS FET

File Size 47.28K  /  8 Page

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    2SJ160 2SJ161 2SJ162

HITACHI[Hitachi Semiconductor]
Part No. 2SJ160 2SJ161 2SJ162
OCR Text ...me Note: 1. Pulse test V(BR)GSS vgs(off) VDS(sat) |yfs| Ciss Coss Crss t on t off Symbol Min V(BR)DSX -120 -140 -160 15 -0.15 -- 0.7 -- -- -- -- -- Typ -- -- -- -- -- -- 1.0 900 400 40 230 110 Max -- -- -- -- -1.45 -12 1.4 -- -- -- -- -- Un...
Description Silicon P-Channel MOS FET

File Size 39.68K  /  8 Page

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For vgs Found Datasheets File :: 34613    Search Time::1.11ms    
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