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				International Rectifier
Part No.	IRF7353D1PBF
OCR Text	...K K D D VDSS = 30V RDS(on) = 0.029 Schottky Vf = 0.39V 2 7 3 6 4 5 Top View Description The FETKY family of co-p...8A 0.046 VGS = 4.5V, ID = 4.7A -- V VDS = V GS, ID = 250A -- S VDS = 24V, ID = 5.8A 1.0 VDS = 24V, ...
Description	FETKY?/a> MOSFET / Schottky Diode FETKY⑩ MOSFET / Schottky Diode
File Size	131.39K / 8 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXMN6A11G ZXMN6A11GFTA ZXMN6A11GFTC
OCR Text	0.14 DESCRIPTION ID= 3.8A This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, ...
Description	N-channel MOSFET 60V N-CHANNEL ENHANCEMENT MODE MOSFET ; Current Rating:6A; Voltage Rating:250V; Mounting Type:Screw; Features:High Attenuation; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No Line Filter; Current Rating:10A; Voltage Rating:250V; Mounting Type:Screw; Features:High Attenuation; Series:MXB
File Size	1,022.46K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7353D2PBF
OCR Text	...K K D D VDSS = 30V RDS(on) = 0.029 Schottky VF = 0.52V 2 7 3 6 4 5 Top View Description The FETKYTM family of Co...8A 0.032 0.046 VGS = 4.5V, ID = 4.7A -- -- V VDS = V GS, ID = 250A 14 -- S VDS = 24V, ID = 5.8A -...
Description	MOSFET / Schottky Diode (VDSS = 30V , RDS(on) = 0.029Ω , Schottky VF = 0.52V) MOSFET / Schottky Diode (VDSS = 30V , RDS(on) = 0.029ヘ , Schottky VF = 0.52V)
File Size	119.05K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	EQI9N50 FQB9N50 FQBI9N50 FQI9N50 FQI9N50TU
OCR Text	... $ $ $ $ $ % &'(&&)*+& ,-.)+/&) 0123 4 012&4 /&&5! 6 !!7" ! " ! !" " " ! ...8A 8A 8A ! ...
Description	500V N-Channel QFET 500V N-Channel MOSFET 500v N CHANNEL MOSFET
File Size	672.36K / 9 Page	View it Online	Download Datasheet

				Harris
Part No.	MUR890E RURP890 MUR870E
OCR Text	...20- -20- - 20 - ns r q jc - - 2.0 - - 2.0 - - 2.0 - - 2.0 o c/w e avl see fig. 7 & 8 - - 20 - - 20 - - 20 - - 20 mj definitions v f = instantaneous forward voltage (pw = 300 m s, d = 2%). i r = instantaneous reverse current. t rr = rever...
Description	700V - 1000V Ultrafast Diodes
File Size	39.20K / 3 Page	View it Online	Download Datasheet

				Savantic, Inc.
Part No.	2SC3281
OCR Text	...acitance CONDITIONS IC=50mA ;IB=0 IC=8A ;IB=0.8a IC=8A ; VCE=5V VCB=200V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=8A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 55 35 MIN 200 2SC3281 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB T...
Description	Silicon NPN Power Transistors
File Size	216.72K / 4 Page	View it Online	Download Datasheet

				SYNC POWER Crop.
Part No.	SPP2345
OCR Text	...=25 p d 1.25 w t a =70 0.8 operating junction temperature t j 150 storage temperature range t stg -55/150 thermal resi...8a 72 85 v gs =-1.8v,i d =-2.3a 100 110 forward transconductance gfs v ds =-5v,i d =-3.5a 8.5...
Description	P-Channel Enhancement Mode MOSFET
File Size	226.58K / 8 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
Part No.	SCG4153 SCG4153-15
OCR Text	...onische bauelemente scg4153 0.8a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet 12-mar-2013 rev. a page 1 of 4 n3 = date code rohs compliant product a suffix of -c specifies ...
Description	N-Channel Enhancement Mode MOSFET
File Size	678.51K / 4 Page	View it Online	Download Datasheet

				Rohm Co., Ltd.
Part No.	RGT30NS65D
OCR Text	...th) v ce = 5v, i c = 10.0ma 5.0 6.0 7.0 v gate - emitter leakage current i ges v ge = ? 30v, v ce = 0v - - - v collector cut - off curr...8a i c = 15a v ge = 15v 6/11 2014.05 - rev.a www.rohm.com ? 2014 rohm co., ltd. all righ...
Description	650V 15A Field Stop Trench IGBT 650V 15A Field Stop Trench IGBT
File Size	704.08K / 12 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	KSC5502 KSC5502TU
OCR Text	...t Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=500A, IC=0 VCES=1200V, VBE=0 TC=25C TC=125C Min. 1200 600 12 Typ. 1350 750 13.2 ...8A, IB1=160mA TC=25C IB2=160mA, TC=125C VCC=300V LC=200uH TC=25C TC=125C tC Cross-over Time TC=25C T...
Description	NPN Planar Silicon Transistor
File Size	143.94K / 8 Page	View it Online	Download Datasheet

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