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SeCoS Halbleitertechnol...
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Part No. |
SSD2504S SSD2504S-15
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OCR Text |
100v , r ds(on) 370m ? n-ch enhancement mode power mosfet 08-may-2014 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of ...3a gate resistance r g - 2 - ? v ds =v gs =0, f =1.0mhz gate-source leakage current i gss - ... |
Description |
N-Ch Enhancement Mode Power MOSFET
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File Size |
548.83K /
4 Page |
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it Online |
Download Datasheet |
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SHANTOU HUASHAN ELECTRO...
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Part No. |
HP107
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OCR Text |
...off current -50 a v cb =-100v, i e =0 i ebo emitter-base cutoff current -2 ma v eb =-5v, i c =0 h fe 1 dc current gain 1000 20000 v ce =-4v, i c =-3a h fe 2 200 v ce =-4v, i c =-8a v ce(sat1) ... |
Description |
NPN SILICON TRANSISTOR
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File Size |
143.83K /
2 Page |
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it Online |
Download Datasheet |
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MAXIM - Dallas Semiconductor
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Part No. |
MAX5003-50WEVKIT
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OCR Text |
...470pF ceramic cap (0805) 0.47F, 100v ceramic caps (2220) 560F, 6.3V electrolytic capacitors Nichicon UPW0J561MPH 47nF ceramic capacitors (08...3a. The input voltage to the MAX5003 EV kit should not exceed 80V at any time. Connect a variable lo... |
Description |
Evaluation Kit for the MAX5003-50W From old datasheet system
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File Size |
606.09K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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