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  11 02 Datasheet PDF File

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.130mH RG = 25, IAS = 82A. (See Figure 12). S ISD 82A, di/dt 310A/s, VDD V...02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001 Notes: 1. Duty f...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.130mH RG = 25, IAS = 82A. (See Figure 12). S ISD 82A, di/dt 310A/s, VDD V...02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001 Notes: 1. Duty factor D = 2....
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...unction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Uses IRF4905 data and test conditions Starting TJ = 25C, L...02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...unction temperature. ( See fig. 11 ) ISD -38A, di/dt -270A/s, VDD V(BR)DSS , TJ 175C Starting TJ = 25C, L = 1.3mH RG = 25, IAS...02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...2 -110 3.8 110 0.71 20 280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Para...02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transi...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...1 -22 -110 110 0.71 20 280 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal...02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transi...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...530A BVDSS = 100 V RDS(on) = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM ...02 .0 Fig 4. Source-Drain Diode Forward Voltage 01 .5 VGS = 10 V IDR , Reverse Drain Cur...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... VDSS =100V G S RDS(on) = 0.11 ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin...02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transi...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ... 89 2 1 6.4 TYP. MAX. UNIT 3 80 11 10 0.05 6 36 18 12 3.5 4.5 7.5 633 103 61 4 6 110 275 100 10 250 40 5.6 19 V V V V V m m S nA A A nC nC n...02 single pulse P D tp D = tp/T T 1E-04 1E-03 1E-02 1E-01 1E+00 0.01 1E-06 1E-05 ...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ... Units C/W www.irf.com 1 11/8/99 IRF7807D1 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-S...02 ID = 7.0A VGS = 10V 0.018 0.01 2.0 4.0 6.0 8.0 10.0 0.016 0 20 40 60 80 VGS, Gate...
Description MOSFET / SCHOTTKY DIODE

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