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    M29W040 M29W040-100K1R M29W040-100K1TR M29W040-100K5R M29W040-100K5TR M29W040-100K6R M29W040-100K6TR M29W040-100N1R M29W

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. M29W040 M29W040-100K1R M29W040-100K1TR M29W040-100K5R M29W040-100K5TR M29W040-100K6R M29W040-100K6TR M29W040-100N1R M29W040-100N1TR M29W040-100N5R M29W040-100N5TR M29W040-100N6R M29W040-100N6TR M29W040-100NZ1R M29W040-100NZ1TR M29W040-100NZ5R M29W040-100NZ5TR M29W040-100NZ6R M29W040-100NZ6TR M29W040-120K1R M29W040-120K1TR M29W040-120K5R M29W040-120K5TR M29W040-120K6R M29W040-120K6TR M29W040-120N1R M29W040-120N1TR M29W040-120N5R M29W040-120N5TR M29W040-120N6R M29W040-120N6TR M29W040-120NZ1R M29W040-120NZ1TR M29W040-120NZ5R M29W040-120NZ5TR M29W040-120NZ6R M29W040-120NZ6TR M29W040-150K1R M29W040-150K1TR M29W040-150K5R M29W040-150K5TR M29W040-150K6R M29W040-150K6TR M29W040-150N1R M29W040-150N1TR M29W040-150N5R M29W040-150N5TR M29W040-150N6R M29W040-150N6TR M29W040-150NZ1R M29W040-150NZ1TR M29W040-150NZ5R M29W040-150NZ5TR M29W040-150NZ6R M29W040-150NZ6TR M29W040-200K1R M29W040-200K1TR M29W040-200K5R M29W040-200K5TR M29W040-200K6R M29W040-200K6TR M29W040-200N1R M29W040-200N1TR M29W040-200N5R M29W040-200N5TR M29W040-200N6R M29W040-200N6TR M29W040-200NZ1R M29W040-200NZ1TR M29W040-200NZ5R M29W040-200NZ5TR M29W040-200NZ6R M29W040-200NZ6TR 29W040
OCR Text ... The FlashMemory organisationis 512K x8 bits with Address lines A0-A18 and Data Inputs/Outputs DQ0-DQ7. Memory control is provided by Chip E...Byte programming takes typically 12s while erase is performed in typically 1.5 second. Erasure of a ...
Description 4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory

File Size 203.39K  /  31 Page

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    MICRON
Part No. MT58L256L3 MT58L256L32D
OCR Text 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8Mb SYNCBURSTTM SRAM FEATURES * * * * * * * * * * * * * * * Fast clock ...BYTE WRITE control and GLOBAL WRITE Three chip enables for simple depth expansion and address pipeli...
Description 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,

File Size 407.50K  /  26 Page

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    MX27C8100 MX27C8100MC-10 MX27C8100MC-12 MX27C8100MC-15 MX27C8100MC-20 MX27C8100PC-10 MX27C8100PC-12 MX27C8100PC-15 MX27C

MCNIX[Macronix International]
Part No. MX27C8100 MX27C8100MC-10 MX27C8100MC-12 MX27C8100MC-15 MX27C8100MC-20 MX27C8100PC-10 MX27C8100PC-12 MX27C8100PC-15 MX27C8100PC-20
OCR Text 512K x16] CMOS OTP ROM FEATURES * 1M x 8 or 512K x 16 organization * +12.5V programming voltage * Fast access time: 100/120/150/200 ns *...BYTE/VPP GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC SOP NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND O...
Description 8M-BIT [1M x8/512K x16] CMOS OTP ROM

File Size 494.41K  /  15 Page

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    MX27C8111 MX27C8111MC-10 MX27C8111MC-12 MX27C8111MC-15 MX27C8111MC-90 MX27C8111PC-10 MX27C8111PC-12 MX27C8111PC-15 MX27C

Macronix International Co., Ltd.
MCNIX[Macronix International]
Part No. MX27C8111 MX27C8111MC-10 MX27C8111MC-12 MX27C8111MC-15 MX27C8111MC-90 MX27C8111PC-10 MX27C8111PC-12 MX27C8111PC-15 MX27C8111PC-90
OCR Text 512K x16] CMOS OTP ROM WITH PAGE MODE * * * * Completely TTL compatible Operating current: 60mA Standby current: 100uA Package type: - 42 p...byte page 1M x 8 or 512K x 16 organization +12.5V programming voltage Fast access time:90/100/120/15...
Description 8M-BIT [1M x8/512K x16] CMOS OTP ROM WITH PAGE MODE 512K X 16 OTPROM, 90 ns, PDIP42

File Size 487.33K  /  15 Page

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    UPD4564323 UPD4564323G5-A10-9JH UPD4564323G5-A10B-9JH UPD4564323G5-A60-9JH UPD4564323G5-A70-9JH UPD4564323G5-A80-9JH

NEC[NEC]
Part No. UPD4564323 UPD4564323G5-A10-9JH UPD4564323G5-A10B-9JH UPD4564323G5-A60-9JH UPD4564323G5-A70-9JH UPD4564323G5-A80-9JH
OCR Text ...rganization (word x bit x bank) 512K x 32 x 4 Clock frequency MHz (MAX.) 166 143 125 100 100 Package 86-pin Plastic TSOP (II) (10.16 mm (400...Byte Write Operation ..................................................................................
Description 64M-bit Synchronous DRAM 4-bank LVTTL
64M-bit Synchronous DRAM 4-bank, LVTTL

File Size 1,022.24K  /  84 Page

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    CY62157CV33 CY62157CV33LL-55BAI CY62157CV33LL-70BAI CY62157CV25 CY62157CV25LL-70BAI CY62157CV30 CY62157CV30LL-55BAI CY62

Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
Part No. CY62157CV33 CY62157CV33LL-55BAI CY62157CV33LL-70BAI CY62157CV25 CY62157CV25LL-70BAI CY62157CV30 CY62157CV30LL-55BAI CY62157CV30LL-70BAI
OCR Text 512K x 16 Static RAM Features * High speed -- 55 ns and 70 ns availability * Voltage range: -- CY62157CV25: 2.2V-2.7V -- CY62157CV30: 2.7V...Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE1 ...
Description 512K x 16 Static RAM

File Size 276.76K  /  13 Page

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    CYPRESS[Cypress Semiconductor]
Part No. CY7C1370CV CY7C1372CV25-250BZI CY7C1370CV25 CY7C1370CV25-167AC CY7C1370CV25-167AI CY7C1370CV25-167BGC CY7C1370CV25-167BGI CY7C1370CV25-167BZC CY7C1370CV25-167BZI CY7C1370CV25-200AC CY7C1370CV25-200AI CY7C1370CV25-200BGC CY7C1370CV25-200BGI CY7C1370CV25-200BZC CY7C1370CV25-200BZI CY7C1370CV25-225AC CY7C1370CV25-225AI CY7C1370CV25-225BGC CY7C1370CV25-225BGI CY7C1370CV25-225BZC CY7C1370CV25-225BZI CY7C1370CV25-250AC CY7C1370CV25-250AI CY7C1370CV25-250BGC CY7C1370CV25-250BGI CY7C1370CV25-250BZC CY7C1370CV25-250BZI CY7C1372CV25 CY7C1372CV25-167AC CY7C1372CV25-167AI CY7C1372CV25-167BGC CY7C1372CV25-167BGI CY7C1372CV25-167BZC CY7C1372CV25-167BZI CY7C1372CV25-200AC CY7C1372CV25-200AI CY7C1372CV25-200BGC CY7C1372CV25-200BGI CY7C1372CV25-200BZC CY7C1372CV25-200BZI CY7C1372CV25-225AC CY7C1372CV25-225AI CY7C1372CV25-225BGC CY7C1372CV25-225BGI CY7C1372CV25-225BZC CY7C1372CV25-225BZI CY7C1372CV25-250AC CY7C1372CV25-250AI CY7C1372CV25-250BGC CY7C1372CV25-250BZC CY7C1372CV25-250BGI
OCR Text 512K x 36/1M x 18 Pipelined SRAM with NoBLTM Architecture Features * Pin-compatible and functionally equivalent to ZBTTM * Supports 250-MH...Byte Write capability * Single 2.5V power supply * Fast clock-to-output times -- 2.6 ns (for 250-MHz...
Description 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
512K x 36/1M x 18 Pipelined SRAM with NoBL(TM) Architecture
512K x 36/1M x 18 Pipelined SRAM with NoBL⑩ Architecture

File Size 492.74K  /  27 Page

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    CY7C1370C CY7C1372C CY7C1372C-250BZI CY7C1370C-167AC CY7C1370C-167AI CY7C1370C-167BGC CY7C1370C-167BGI CY7C1370C-167BZC

CYPRESS[Cypress Semiconductor]
Part No. CY7C1370C CY7C1372C CY7C1372C-250BZI CY7C1370C-167AC CY7C1370C-167AI CY7C1370C-167BGC CY7C1370C-167BGI CY7C1370C-167BZC CY7C1370C-167BZI CY7C1370C-200AC CY7C1370C-200AI CY7C1370C-200BGC CY7C1370C-200BGI CY7C1370C-200BZC CY7C1370C-200BZI CY7C1370C-225AC CY7C1370C-225AI CY7C1370C-225BGC CY7C1370C-225BGI CY7C1370C-225BZC CY7C1370C-225BZI CY7C1370C-250AC CY7C1370C-250AI CY7C1370C-250BGC CY7C1370C-250BGI CY7C1370C-250BZC CY7C1370C-250BZI CY7C1372C-167AC CY7C1372C-167AI CY7C1372C-167BGC CY7C1372C-167BGI CY7C1372C-167BZC CY7C1372C-167BZI CY7C1372C-200AC CY7C1372C-200AI CY7C1372C-200BGC CY7C1372C-200BGI CY7C1372C-200BZC CY7C1372C-200BZI CY7C1372C-225AC CY7C1372C-225AI CY7C1372C-225BGC CY7C1372C-225BGI CY7C1372C-225BZC CY7C1372C-225BZI CY7C1372C-250AC CY7C1372C-250AI CY7C1372C-250BGC CY7C1372C-250BGI CY7C1372C-250BZC CY7C1370C-167AXC
OCR Text 512K x 36/1M x 18 Pipelined SRAM with NoBLTM Architecture Features * Pin-compatible and functionally equivalent to ZBTTM * Supports 250-MH...Byte Write capability * Single 3.3V power supply * 3.3V/2.5V I/O power supply * Fast clock-to-output...
Description 512K x 36/1M x 18 Pipelined SRAM with NoBL(TM)Architecture
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture

File Size 479.10K  /  27 Page

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    Microchip Technology Inc
Part No. 24LC65
OCR Text ...ected to the same bus for up to 512K bits total memory * Including 100 kHz (2.5V) and 400 kHz (5.0V) compatibility * Programmable block secu...byte. The master device must generate an extra clock pulse which is associated with this acknowledge...
Description SERIAL EEPROM,8KX8,CMOS,DIP,8PIN,PLASTIC
From old datasheet system

File Size 75.24K  /  12 Page

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    Cypress Semiconductor Corp.
Part No. CY7C1333 7C1333 CY7C1333-66AC CY7C1333-50AC
OCR Text ...ill be used for 128K, 256K, and 512K depths respectively. No connects. Reserved for parity I/O signals on x36 devices. These inputs are not ...byte write operations, see Write Cycle Description table for details) is latched into the device and...
Description 64Kx32 Flow-Thru SRAM with NoBL Architecture(B>NoBL结构4Kx32流通式 SRAM)
64Kx32 Flow-Thru SRAM with NoBL⑩ Architecture
From old datasheet system

File Size 179.79K  /  12 Page

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