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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N06S2L-09 SPB80N06S2L-09
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| OCR Text |
...tate resistance
V GS=4.5V, I D=52a
Drain-source on-state resistance
V GS=10V, I D=52a
1Current limited by bondwire ; with an RthJC = 0.8K/W the chip is able to carry ID= 103A at 25C, for detailed information see app.-note ANPS071E a... |
| Description |
Low Voltage MOSFETs - TO220/263; 80A; 55V; LL; 8.5mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
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| File Size |
310.79K /
8 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
STW52NK25Z
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| OCR Text |
52a TO-247 Zener-Protected SuperMESHTM MOSFET
Table 1: General Features
TYPE STW52NK25Z
s s s s s s
Figure 1: Package
ID 52 A Pw 300 W
VDSS 250 V
RDS(on) < 0.045
TYPICAL RDS(on) = 0.033 EXTREMELY HIGH dv/dt CAPABILITY 100%... |
| Description |
N-CHANNEL 250V - 0.033 - 52a TO-247 Zener-Protected SuperMESH MOSFET
N-CHANNEL 250V - 0.033з - 52a TO-247 Zener-Protected SuperMESH⑩ MOSFET
N-CHANNEL 250V-0.033Ohm-52a TO-247 Zener-Protected SuperMESH™MOSFET
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| File Size |
211.73K /
10 Page |
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it Online |
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Microsemi
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| Part No. |
APT44GA60S
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| OCR Text |
...le i c = 13a i c = 26a i c = 52a i c = 26a i c = 52a 13v 5v 15v i c = 26a t j = 25c v ce = 480v v ce = 300v v ce = 120v t j = 25c t j = -55c v ge = 15v t j = 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 1, outpu... |
| Description |
IGBT w/o anti-parallel diode
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| File Size |
188.49K /
6 Page |
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it Online |
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