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SP665906 PLC497 4ALVCH STR200 JANSR2 1N942A CONTROL 4ALVCH
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  avalanche Datasheet PDF File

For avalanche Found Datasheets File :: 35176    Search Time::2.375ms    
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    2SJ610

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ610
OCR Text ... power dissipation Single pulse avalanche energy (Note 2) avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEITA TOSHIBA Weight: 0.36 g (typ.) Thermal Characteristics Characteris...
Description Switching Regulator, DC-DC Converter and Motor Drive Applications

File Size 235.74K  /  7 Page

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    2SJ619

Toshiba Corporation
Toshiba Semiconductor
Sanyo Semicon Device
Part No. 2SJ619
OCR Text ...ipation (Tc = 25C) Single pulse avalanche energy (Note 2) avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEITA TOSHIBA Weight: 0.74 g (typ.) Circuit Configuration 4 Thermal ...
Description ZD-3.6V- 1 W
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications

File Size 216.16K  /  6 Page

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    2SJ620

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ620
OCR Text ...ipation (Tc = 25C) Single pulse avalanche energy (Note 2) avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Circuit Confi...
Description Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)

File Size 221.26K  /  6 Page

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    APT100M50J09

Microsemi Corporation
Part No. APT100M50J09
OCR Text ...ate-source voltage single pulse avalanche energy 2 avalanche current, repetitive or non-repetitive characteristic total power dissipation @ t c = 25c junction to case thermal resistance case to sink thermal resistance, flat, greased sur...
Description N-Channel MOSFET

File Size 117.70K  /  4 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. IRL2203NS IRL2203NL
OCR Text ...rature fast switching fully avalanche rated 100% r g tested description to-262 irl2203nl d 2 pak irl2203ns absolute maximum ratings symbol parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c con...
Description HEXFET? Power MOSFET

File Size 329.61K  /  8 Page

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    IRFP26N60L IRFP26N60LPBF

International Rectifier
Part No. IRFP26N60L IRFP26N60LPBF
OCR Text ... ??? 170 ??? (energy related) avalanche characteristics symbol parameter typ. units e as sin g le pulse avalanche ener gy ??? mj i ar avalanche current ??? a e ar repetitive avalanche ener gy ??? mj thermal resistance symbol par...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

File Size 556.90K  /  9 Page

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    IRF830

Comset Semiconductor
Part No. IRF830
OCR Text ... current t c = 25c 18 i ar avalanche current, limited by t j max 4.5 e as avalanche energy, single pulse 280 mj e ar avalanche energy, periodic limited by t j max 7.4 v gs gate-source voltage 20 v r ds ( on ) drain-so...
Description N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

File Size 99.93K  /  3 Page

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    2SK2383

PANASONIC[Panasonic Semiconductor]
Part No. 2SK2383
OCR Text avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.50.5 4.5 3.20.1 10.0 3.00.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving ci...
Description Silicon N-Channel Power F-MOS FET

File Size 42.68K  /  3 Page

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    Comset Semiconductors
Part No. IRF830
OCR Text ... current t c = 25c 18 i ar avalanche current, limited by t j max 4.5 e as avalanche energy, single pulse 280 mj e ar avalanche energy, periodic limited by t j max 7.4 v gs gate-source voltage 20 v r ds ( on ) drain-so...
Description N-Channel Enhancement Mode Power MOS Transistors

File Size 155.24K  /  3 Page

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    Comset Semiconductors
Part No. IRF630
OCR Text ... current t c = 25c 36 i ar avalanche current, limited by t j max 9 e as avalanche energy, single pulse i d = 2.4 a, v dd = 50 v, r gs = 25 ? , l= 56.3 h, t j = 25c 250 mj e ar avalanche energy, periodic limited by t j ma...
Description N-Channel Enhancement Mode Power MOS Transistors

File Size 152.60K  /  3 Page

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For avalanche Found Datasheets File :: 35176    Search Time::2.375ms    
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