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  darlington Datasheet PDF File

For darlington Found Datasheets File :: 5167    Search Time::1.875ms    
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    SGS Thomson Microelectronics
Part No. AN410
OCR Text ...river stage for line deflection darlington transis- tor - frame oscillator - frame amplifier with flyback generator for direct drive of the vertical deflection yoke. the tea2037a is particularly well-suited for low- cost monitors since it i...
Description TEA2037A HORIZONTAL & VERTICAL DEFLECTION CIRCUIT

File Size 174.82K  /  17 Page

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    ST Microelectronics
Part No. VB029SP13TR
OCR Text ...double flag-on coil current n darlington base accessible description the vb029, vb029sp, vb029(011y) vb029(012y) are a high voltage power integrated circuit designed in stmicroelectronics vipower? technology, with vertical current flow po...
Description HIGH VOLTAGE IGNITION COIL DRIVER POWER IC

File Size 187.14K  /  10 Page

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    MJ4032

Central Semiconductor Corp
Central Semiconductor C...
Part No. MJ4032
OCR Text ...npn complementary silicon power darlington transistors to-3 case central semiconductor corp. tm r0 (4-may 2009) description: the central semiconductor mj4032, mj4035 types are complementary silicon power darlington transistors designed for ...
Description COMPLEMENTARY SILICON POWER darlington TRANSISTORS

File Size 198.49K  /  2 Page

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    NTE3103

NTE[NTE Electronics]
Part No. NTE3103
OCR Text darlington Description: The NTE3103 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon darlington connected phototransistor in a plastic housing. The packaging system is designed to optimize the mechanica...
Description Photon Coupled Interrupter Module NPN darlington

File Size 19.28K  /  2 Page

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    CJD122 CJD12210 CJD127

Central Semiconductor Corp
Part No. CJD122 CJD12210 CJD127
OCR Text darlington transistors description: the central semiconductor cjd122, cjd127 types are complementary silicon power darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier application...
Description SURFACE MOUNT COMPLEMENTARY SILICON POWER darlington TRANSISTORS

File Size 415.56K  /  2 Page

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    CJD112 CJD11210 CJD117

Central Semiconductor Corp
Part No. CJD112 CJD11210 CJD117
OCR Text darlington transistors description: the central semiconductor cjd112, cjd117 types are complementary silicon power darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier application...
Description SURFACE MOUNT COMPLEMENTARY SILICON POWER darlington TRANSISTORS

File Size 415.56K  /  2 Page

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    Fairchild Semiconductor, Corp.
Part No. BD679ASTU BD677ASTU BD679ASNL BD675AS
OCR Text ...ng applications  medium power darlington tr  complement to bd676a, bd678a, bd680a and bd682 respectively 1 to-126 1. emitter 2.collector 3.base ?2000 fairchild semiconductor international bd675a/677a/679a/681 rev. a, february 200...
Description NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Rail 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Silicon Transistor 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN Epitaxial Silicon Transistor; Package: TO-126; No of Pins: 3; Container: Bulk 4 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-126

File Size 140.65K  /  8 Page

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    PZTA28 MMBTA28 MPSA28

FAIRCHILD[Fairchild Semiconductor]
Part No. PZTA28 MMBTA28 MPSA28
OCR Text ...ark: 3SS B SOT-223 NPN darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. Absolute Maximum Ratings* Symbol VCES VCBO ...
Description    NPN darlington Transistor

File Size 119.70K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. M54562P M54562P/FP
OCR Text darlington transistor arrays. the circuits are made of pnp and npn transistors. both the semiconductor integrated cir- cuits perform high-current driving with extremely low input- current supply. features high breakdown voltage (bv ceo 3...
Description 8-UNIT 500mA SOURCE TYPE darlington TRANSISTOR ARRAY WITH CLAMP DIODE

File Size 90.23K  /  4 Page

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    M54562P12 M54562P

Mitsubishi Electric Semiconductor
Part No. M54562P12 M54562P
OCR Text darlington transistor arrays. the circuits are made of pnp and npn transistors. both the semiconductor integrated cir- cuits perform high-current driving with extremely low input- current supply. features high breakdown voltage (bv ceo 3...
Description 8-UNIT 500mA SOURCE TYPE darlington TRANSISTOR ARRAY WITH CLAMP DIODE 8个单00mA的源类型达林顿晶体管阵列钳位二极

File Size 81.10K  /  4 Page

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