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  effect Datasheet PDF File

For effect Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    TOSHIBA[Toshiba Semiconductor]
Part No. HN1K04FU
Description Field effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
TOSHIBA Field effect Transistor Silicon N Channel MOS Type

File Size 119.65K  /  5 Page

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    RFP10P12 RFM10P15

GE Solid State
Part No. RFP10P12 RFM10P15
Description (RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-effect TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-effect TRANSISTORS

File Size 270.80K  /  4 Page

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    PTF10133

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10133
Description 85 Watts, 860-960 MHz GOLDMOS Field effect Transistor 85瓦,860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field effect Transistor

File Size 176.20K  /  6 Page

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    ALLEGRO[Allegro MicroSystems]
Part No. A114006 A118506 A1185ELHLT-T A1143LUATI-T4 A1140 A1140EUATI-T4 A1140LUATI-T4 A1141 A1141EUATI-T4 A1141LUATI-T4 A1142 A1142ELHLT-T A1142EUA-T A1142LLHLT-T A1142LUA-T A1142LUATI-T4 A1143 A1143ELHLT-T A1143EUA-T A1143EUATI-T4 A1143LLHLT-T A1143LUA-T
Description Sensitive Two-Wire Chopper-Stabilized Unipolar Hall effect Switches
Ultrasensitive Two-Wire Field-Programmable Chopper-Stabilized Unipolar Hall-effect Switches

File Size 327.30K  /  13 Page

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    NXP Semiconductors N.V.
Part No. 74HC4852PW 74HC4852D 74HC4852PW118 74HC4852BQ
Description Dual 4-channel analog multiplexer-demultiplexer with injection-current effect control
Dual 4-channel analog multiplexer/demultiplexer with injection-current effect control; Package: SOT403-1 (TSSOP16); Container: Reel Pack, SMD, 13&quot;

File Size 107.82K  /  20 Page

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    IRFF120 IRFF121 IRFF122 IRFF123

General Electric Solid State
GE Solid State
Part No. IRFF120 IRFF121 IRFF122 IRFF123
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-effect TRANSISTORS

File Size 161.85K  /  5 Page

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    OHS3175U OHN3175U

Electronic Theatre Controls, Inc.
Optek Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. OHS3175U OHN3175U
Description Hallogic Bipolar Hall effect Sensors(Latched)(Hallogic(R) 用于无刷电机的双极霍尔效应传感器,宽电源电压范围,工作温度范围-40 125
Hallogic Bipolar Hall effect Sensors(Latched)(Hallogic(R) 用于无刷电机的双极霍尔效应传感器,宽电源电压范围,工作温度范围-20 85
HaLLOGIC Bipolar Hall effect Sensors(Latches)

File Size 267.84K  /  2 Page

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    TPCS8211

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TPCS8211
Description TOSHIBA Field effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Field effect Transistor Silicon N Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools

File Size 220.33K  /  7 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3442
Description TOSHIBA Field effect Transistor Silicon N Channel MOS Type (U-MOSII)
From old datasheet system
Field effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

File Size 200.42K  /  6 Page

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    2SJ460 2SJ460M 2SJ460M-T 2SJ460-T/JM 2SJ460/JM

NEC, Corp.
NEC[NEC]
Part No. 2SJ460 2SJ460M 2SJ460M-T 2SJ460-T/JM 2SJ460/JM
Description P-CHANNEL MOS FIELD effect TRANSISTOR FOR HIGH SPEED SWITCHING P沟道MOS场效应晶体管高速开
P-CHANNEL MOS FIELD effect TRANSISTOR FOR HIGH SPEED SWITCHING
Pch D-MOSFET SST 50V/0.1A

File Size 291.72K  /  6 Page

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For effect Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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