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IRF[International Rectifier]
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Part No. |
IRHN9130
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OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier 's P-channel RAD HARD HEXFETs has ... |
Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-11A)
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File Size |
88.01K /
4 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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Part No. |
IRHNA8160 IRHNA7160
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OCR Text |
... capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the use... |
Description |
TRANSISTOR N-CHANNEL
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File Size |
128.72K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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