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  XTL571200-A180-120 Datasheet PDF File

For XTL571200-A180-120 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    GENERAL SEMICONDUCTOR INC
Part No. ZMU120/25
Description 120 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

File Size 63.79K  /  2 Page

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Renesas Electronics Corporation

Part No. UPA1809GR-9JG-E2-A
Description Nch Single Power Mosfet 30V 8.0A 21Mohm Tssop8
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    CDBA120L CDBA120LL CDBA120SL CDBA140L CDBA140LL CDBA140SL CDBA180-G CDBA1100-G CDBA120-G CDBA140-G CDBA160-G

COMCHIP[Comchip Technology]
Part No. CDBA120L CDBA120LL CDBA120SL CDBA140L CDBA140LL CDBA140SL CDBA180-G CDBA1100-G CDBA120-G CDBA140-G CDBA160-G
Description SMD Schottky Barrier rectifiers

File Size 141.31K  /  4 Page

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Renesas Electronics Corporation

Part No. UPA1803GR-9JG-E1-A
Description Nch Single Power Mosfet 30V 8.0A 12Mohm Tssop8
Tech specs    

Official Product Page

    Murata Power Solutions, Inc.
Part No. UEP-5/3500-D48 UEP-5/3500-D24 UEP-15/1200-D24 UEP-12/1400-D24N UEP-5/3500-D12 UEP-12/1400-D12N UEP-15/1200-D12N UEP-12/1400-D48
Description 3.3V, 32 Mbit (1024 KBit x 32) TIMEKEEPER® SRAM
Multi-channel clock distribution circuit
Serial real-time clock with 44 bytes NVRAM and reset
Serial I2C bus RTC with battery switchover
3.3V, 32 Mbit (1024 KBit x 32) TIMEKEEPER&#174; SRAM 模拟IC
Serial SPI bus RTC with battery switchover 模拟IC

File Size 126.89K  /  9 Page

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Renesas Electronics Corporation

Part No. UPA1809GR-9JG-E1-A
Description Nch Single Power Mosfet 30V 8.0A 21Mohm Tssop8
Tech specs    

Official Product Page

    PTMA180402M

Cree, Inc
Part No. PTMA180402M
Description Wideband RF LDMOS Integrated Power Amplifier 40 W, 28 V, 1800 ?2100 MHz

File Size 774.93K  /  15 Page

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Renesas Electronics Corporation

Part No. UPA1804GR-9JG-E1-A
Description Nch Single Power Mosfet 30V 8.0A 23Mohm Tssop8
Tech specs    

Official Product Page

    EUDYNA[Eudyna Devices Inc]
Part No. EGN35A180IV
Description High Voltage - High Power GaN-HEMT

File Size 103.92K  /  4 Page

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Renesas Electronics Corporation

Part No. UPA1807GR-9JG-E2-A
Description N-Channel Mos Field Effect Transistor For Switching
Tech specs    

Official Product Page

    EUDYNA[Eudyna Devices Inc]
Part No. EGN21A180IV
Description High Voltage - High Power GaN-HEMT

File Size 230.17K  /  4 Page

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Renesas Electronics Corporation

Part No. UPA1801GR-9JG-E1-A
Description N-Channel Mos Field Effect Transistor For Switching
Tech specs    

Official Product Page

    IXTA180N10T

IXYS Corporation
Part No. IXTA180N10T
Description N-Channel Enhancement Mode Avalanche Rated

File Size 150.15K  /  6 Page

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Renesas Electronics Corporation

Part No. UPA1808GR-9JG-E1-A
Description N-Channel Mos Field Effect Transistor For Switching
Tech specs    

Official Product Page

    FGA180N33AT

Fairchild Semiconductor
Part No. FGA180N33AT
Description Discrete IGBT
330V, 180A PDP Trench IGBT
   330V, 180A PDP Trench IGBT

File Size 563.21K  /  8 Page

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Renesas Electronics Corporation

Part No. UPA1802GR-9JG-E1-A
Description N-Channel Mos Field Effect Transistor For Switching
Tech specs    

Official Product Page

    Taiyo Yuden (U.S.A.), I...
Part No. LAN02TA180J
Description Axial Leaded Inductors

File Size 124.97K  /  1 Page

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Renesas Electronics Corporation

Part No. UPA1807GR-9JG-E1-A
Description N-Channel Mos Field Effect Transistor For Switching
Tech specs    

Official Product Page

    PTMA180402M

Infineon Technologies AG
Part No. PTMA180402M
Description Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 ?2100 MHz

File Size 720.55K  /  14 Page

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Renesas Electronics Corporation

Part No. UPA1806GR-9JG-E1-A
Description N-Channel Mos Field Effect Transistor For Switching
Tech specs    

Official Product Page

For XTL571200-A180-120 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

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