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  10.70-11.70ghz Datasheet PDF File

For 10.70-11.70ghz Found Datasheets File :: 21    Search Time::2.625ms    
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    RFMA0912-1W-Q7

Excelics Semiconductor, Inc.
Part No. RFMA0912-1W-Q7
OCR Text ...TS GHz dBm dB 30.0 30.0 -41 -10 -6 180 800 7 220 1100 8 -0.3 9 -38 dBc dB dB mA mA V V o Drain Voltage -2.5 -30 C/W o Opera...70 GHz High-Gain Surface Mounted PA Package Dimension and Pin Assignment Top View 0.2760.002 0....
Description 9.50 - 11.70 GHz High-Gain Surface Mounted PA

File Size 141.92K  /  4 Page

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    RFMA0912-1W

Excelics Semiconductor, Inc.
Part No. RFMA0912-1W
OCR Text ...30 MIN 9.5 29 28 -38 30 31 -41 -10 -6 900 7 -5 7 7.5 + 80 o TYP MAX 11.7 UNITS GHz dBm dB dBc -8 1050 8 dB dB mA V V C/W C ...70 GHz Power Amplifier MMIC 01 Package Outline Excelics RFMA0912 -1W All dimensions in inc...
Description 9.50 - 11.70 GHz Power Amplifier MMIC

File Size 118.45K  /  3 Page

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    RFMA0912-2W

Excelics Semiconductor, Inc.
Part No. RFMA0912-2W
OCR Text 10/05/2007 9.50 - 11.70 GHz Power Amplifier MMIC FEATURES * * * * 9.50- 11.70GHz Operating Frequency Range 32.5dBm Output Power at 1dB Compression 30.0 dB Typical Power Gain @ 1dB Gain Compression -41dBc Typical OIM3 @ each tone Pout...
Description 9.50 - 11.70 GHz Power Amplifier MMIC

File Size 80.52K  /  2 Page

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    PHI617-30 PH1617-30

Tyco Electronics
Electronic Theatre Controls, Inc.
PCA Electronics, Inc.
Part No. PHI617-30 PH1617-30
OCR Text ...`c pcl ? T STG 8JC 60 60 3.0 10 109 200 -55 to +150 1.6 V V V A w "C "C "CM, UNLESS NOTED, TOLERANCES ARE It+CHES tO'J5' cHILUHETERS ...70 1.651.70 GHz GHz 1 R I Emitter-Base Breakdown Voltaae DC Forward Current Gain Power Gain Colle...
Description Wireless Bipolar Power Transistor/ 30W 1.6 - 1.7 GHz
Wireless Bipolar Power Transistor, 30W 1.6-1.7 GHz
CONNECTOR ACCESSORY 连接器附

File Size 211.24K  /  3 Page

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    PH1617-30 PHI617-30

MA-Com
Tyco Electronics
Part No. PH1617-30 PHI617-30
OCR Text ...`c pcl ? T STG 8JC 60 60 3.0 10 109 200 -55 to +150 1.6 V V V A w "C "C "CM, UNLESS NOTED, TOLERANCES ARE It+CHES tO'J5' cHILUHETERS ...70 1.651.70 GHz GHz 1 R I Emitter-Base Breakdown Voltaae DC Forward Current Gain Power Gain Colle...
Description Wireless Bipolar Power Transistor, 30W 1.6-1.7 GHz
Wireless Bipolar Power Transistor, 30W 1.6 - 1.7 GHz

File Size 206.35K  /  3 Page

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    Excelics Semiconductor
Part No. EIC7177-10
OCR Text 10 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 ...70 ghz 10-watt intern ally-matched power fet features ? 7.10 ? 7.70 ghz bandwidth ? inp...
Description Internally Matched Power FET

File Size 177.57K  /  4 Page

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    Hitachi
Part No. ESLB-P540A-X
OCR Text ...7,6))=-26.652 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0 20 -60 -50 -40 -30 -20 -10 -70 0 freq, ghz db(s(7,6)) m19 m20 m21 m22 m25 m26 m5 freq=4.900ghz db(s(2,1))-db(s(3,1))=0.452 m6 freq=5.900ghz db(s(2,1))-db(s(3,1))=-0.072 4.75 5....
Description 4.9-5.9GHz Band Chip Multilayer Band Pass Filter

File Size 113.80K  /  4 Page

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    BGA61208

Infineon Technologies AG
Part No. BGA61208
OCR Text ... v cc =5v, r bias =135 ? p in 10 dbm total power dissipation, t s < 105 c 2) 2) t s is measured on the ground lead at the soldering poin...70 80 v cc [v] i d [ma] 01627 47 68 100 150 device current i d = f(t a ) v cc = 5v, r bia...
Description Silicon Germanium Broadband MMIC Amplifier
0 MHz - 2800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

File Size 213.14K  /  9 Page

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    BGA61408

Infineon Technologies AG
Part No. BGA61408
OCR Text ..., v cc =5v, r bias =62 ? p in 10 dbm total power dissipation, t s < 102 c 2) 2) t s is measured on the ground lead at the soldering poi...70 80 v cc [v] i d [ma] 01627 47 68 100 150 device current i d = f(t a ) v cc = 5v,r bias ...
Description Silicon Germanium Broadband MMIC Amplifier

File Size 213.13K  /  9 Page

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    BGA61608

Infineon Technologies AG
Infineon Technologies A...
Part No. BGA61608
OCR Text ...cc = 6 v, r bias = 33 ? p in 10 dbm total power dissipation, t s < 78 c 2) 2) t s is measured on the ground lead at the soldering poin...70 80 v cc [v] i d [ma] 01633 47 68 100 150 device current i d = f(t a ) v cc = 6v, r b...
Description Silicon Germanium Broadband MMIC Amplifier
   Silicon Germanium Broadband MMIC Amplifier

File Size 191.77K  /  9 Page

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