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  100v 40a Datasheet PDF File

For 100v 40a Found Datasheets File :: 790    Search Time::1.812ms    
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    STB35NF10 STB35NF10T4 STB35NF1006 STP35NF10

STMicroelectronics
Part No. STB35NF10 STB35NF10T4 STB35NF1006 STP35NF10
OCR Text 100v - 0.030 - 40a - D2PAK/TO-220 Low gate charge STripFETTM II Power MOSFET General features Type STB35NF10 STP35NF10 VDSS 100v 100v RDS(on) <0.035 <0.035 ID 40a 40a 3 3 1 2 Exceptional dv/dt capability 100% avalanche t...
Description N-channel 100v - 0.030Ω - 40a - D2PAK/TO-220 Low gate charge STripFET II Power MOSFET

File Size 399.89K  /  14 Page

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    STP60NF10 STB60NF10 STB60NF10-1 STB60NF1006

STMicroelectronics
Part No. STP60NF10 STB60NF10 STB60NF10-1 STB60NF1006
OCR Text 100v - 0.019 - 80A - TO-220 - D2PAK - I2PAK STripFETTM II Power MOSFET General features Type STB60NF10 STB60NF10-1 STP60NF10 VDSS (@...40a, VDD = 30V Table 2. Symbol RthJC RthJA Tl Thermal data Parameter Thermal resistance junc...
Description N-channel 100v - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET?/a> II Power MOSFET

File Size 345.60K  /  15 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FRK150R FRK150D FRK150H
OCR Text 100v, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features * 40a, 100v, RDS(on) = 0.055 * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined...
Description 40a, 100v, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
40a/ 100v/ 0.055 Ohm/ Rad Hard/ N-Channel Power MOSFETs

File Size 47.77K  /  6 Page

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    Infineon
Part No. SGB15N120
OCR Text ...hstand time 1) v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 198 w operatin...40a 50a 60a 70 a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a 100a ...
Description IGBTs & DuoPacks - 15A 1200V TO263AB SMD IGBT

File Size 342.94K  /  12 Page

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    SIEMENS AG
Part No. SGB15N120
OCR Text ... withstand time 1) v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 198 w operating juncti...40a 50a 60a 70 a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a 100a dc 1...
Description Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术(不扩散技术中的快速第S - IGBT的)

File Size 415.74K  /  12 Page

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    NTE2930

NTE Electronics
Part No. NTE2930
OCR Text ...kage Current: 10A (Max) @ VDS = 100v Absolute Maximum Ratings: Drain-to-Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . ....40a, di/dt 470A/s, VDD V(BR)DSS, Starting TJ = +25C. Electrical Characteristics: (TC = +25C unl...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.34K  /  3 Page

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    IRF
Part No. IRHNA63260 IRHNA67260
OCR Text ... -20V VGS = 12V, ID = 56A VDS = 100v VDD = 100v, ID = 56A, VGS = 12V, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Ga...40a VGS = 12V, ID = 40a VGS = 0V, ID = 56A Min 200 2.0 -- -- -- -- -- -- Max -- 4.0 100 -100...
Description RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

File Size 137.66K  /  8 Page

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    IRHNA63260 IRHNA64260 IRHNA67260 IRHNA68260

International Rectifier
Part No. IRHNA63260 IRHNA64260 IRHNA67260 IRHNA68260
OCR Text ...source charge ? ? 70 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 60 t d (on) turn-on delay time ? ? 40 v dd = 100v, i d = 63a...40a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.028 ? 0...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package. Also available in 300, 600 and 1000kRad.

File Size 137.59K  /  8 Page

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