22 1184mhz pdf Datasheet P2 Description --- IC-ON-LINE


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22 1184mhz Datasheet PDF File

For 22 1184mhz Found Datasheets File :: 21+ Page :: | 1 | <2> | 3 |

					Ecliptek, Corp.
Part No.	EC2620ETTTS-22.1184M
Description	OSCILLATORS 20PPM -40 85 3.3V 4 22.1184mhz TS CMOS 5X7MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 22.1184 MHz, LVCMOS OUTPUT
File Size	149.23K / 5 Page	View it Online	Download Datasheet

					Ecliptek, Corp.
Part No.	EP2600ETTTS-22.1184M
Description	OSCILLATORS 100PPM -40 85 3.3V 4 22.1184mhz TS HCMOS 5X7MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 22.1184 MHz, LVCMOS OUTPUT
File Size	167.41K / 5 Page	View it Online	Download Datasheet

					Ecliptek, Corp.
Part No.	EP1100PDC-22.1184M
Description	OSCILLATORS 100PPM -20 70 5.0V 4 22.1184mhz PD CMOS FULL 14PIN DIP CRYSTAL OSCILLATOR, CLOCK, 22.1184 MHz, HCMOS OUTPUT
File Size	146.49K / 7 Page	View it Online	Download Datasheet

					Ecliptek, Corp.
Part No.	EP1145PDC-22.1184M
Description	OSCILLATORS 50PPM -20 70 5.0V 4 22.1184mhz PD CMOS FULL 14PIN DIP CRYSTAL OSCILLATOR, CLOCK, 22.1184 MHz, HCMOS OUTPUT
File Size	146.49K / 7 Page	View it Online	Download Datasheet

					Ecliptek, Corp.
Part No.	EP2600ETTS-22.1184M
Description	OSCILLATORS 100PPM -40 85 3.3V 4 22.1184mhz TS CMOS 5X7MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 22.1184 MHz, LVCMOS OUTPUT
File Size	167.40K / 5 Page	View it Online	Download Datasheet

					Ecliptek, Corp.
Part No.	EH1145TTS-22.1184M
Description	OSCILLATORS 50PPM 0 70 5.0V 4 22.1184mhz TS CMOS FULL 14PIN DIP CRYSTAL OSCILLATOR, CLOCK, 22.1184 MHz, HCMOS/TTL OUTPUT
File Size	146.47K / 7 Page	View it Online	Download Datasheet

					Ecliptek, Corp.
Part No.	EH2500TS-22.1184M
Description	OSCILLATORS 100PPM 0 70 5.0V 4 22.1184mhz TS HCMOS/TTL 5X7MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 22.1184 MHz, HCMOS/TTL OUTPUT
File Size	148.54K / 6 Page	View it Online	Download Datasheet

					Wolfgang Knap Ges.m.b.H. . Co. KG Wolfgang Knap Ges.m.n.H. WK[Wolfgang Knap]
Part No.	EXO-3 EXO-3-12.288M EXO-3-14.31818M EXO-3-14.7456M EXO-3-14.91005M EXO-3-15.9744M EXO-3-16.128M EXO-3-16.257M EXO-3-16.384M EXO-3-19.0909M EXO-3-18.432M EXO-3-17.73447M EXO-3-19.6608M EXO-3-21.47727M EXO-3-22.1184M EXO-3-24.576M
Description	CRYSTAL OSCILLATOR FOR uPs WITH PROGRAMMBLE OUTPUT AC Motorized Impeller; Series:Diplomat 与晶体振荡器的可编程输出断电 Crystal oscillator for uPs with programmable output, 12.288MHz Crystal oscillator for uPs with programmable output, 14.31818MHz Crystal oscillator for uPs with programmable output, 14.7456MHz Crystal oscillator for uPs with programmable output, 14.9105MHz Crystal oscillator for uPs with programmable output, 15.9744MHz Crystal oscillator for uPs with programmable output, 16.128MHz Crystal oscillator for uPs with programmable output, 16.257MHz Crystal oscillator for uPs with programmable output, 16.384MHz Crystal oscillator for uPs with programmable output, 19.0909MHz Crystal oscillator for uPs with programmable output, 18.432MHz Crystal oscillator for uPs with programmable output, 17.73447MHz Crystal oscillator for uPs with programmable output, 19.6608MHz Crystal oscillator for uPs with programmable output, 21.47727MHz Crystal oscillator for uPs with programmable output, 22.1184mhz Crystal oscillator for uPs with programmable output, 24.576MHz
File Size	21.90K / 1 Page	View it Online	Download Datasheet

					Jewel Hill Electronic Co., Ltd.
Part No.	GB162B GB162BNGBAMLA-V01 GB162BNGBAMLB-V01 GB162BNGBAMUB-V01 GB162BNGBANDB-V01 GB162BNGBANUB-V01 GB162BNGBAMDB-V01 GB162BHYBBNLA-V01 GB162BNGBBMUB-V01 GB162BNGBBMUA-V01 GB162BNGAANUB-V01 GB162BHYBBNDB-V01 GB162BNGBAMUA-V01 GB162BNGBANDA-V01 GB162BNGBANLA-V01 GB162BNGBANUA-V01 GB162BNGBBMLA-V01 GB162BNGBBMLB-V01 GB162BNGBANLB-V01 GB162BNGBBMDB-V01 GB162BNGBBMDA-V01 GB162BNYAAMLB-V01 GB162BNYAAMLA-V01 GB162BHGBANDA-V01 GB162BHGBANDB-V01 GB162BHGBANLA-V01 GB162BHGBANLB-V01 GB162BHGBANUA-V01 GB162BHGBANUB-V01 GB162BHGBBMDA-V01 GB162BHGBBMDB-V01 GB162BHGBBMLA-V01 GB162BHGBBMLB-V01 GB162BHGBBMUA-V01 GB162BHGBBMUB-V01 GB162BHGBBNDA-V01 GB162BHGBBNDB-V01 GB162BHGBBNLA-V01 GB162BHGBBNLB-V01 GB162BHGBBNUA-V01 GB162BHGBBNUB-V01 GB162BHYAAMDA-V01 GB162BNGBBNUA-V01 GB162BNYAAMUB-V01 GB162BNYAAMUA-V01 GB162BNYAANUA-V01 GB162BNYAANDB-V01 GB162BNGAAMLA-V01 GB162BHYBAMDA-V01 GB162BNGAAMUB-V01 GB162BHYAAMDB-V01 GB162BNYAAMDB-V01 GB162BHGBAMUA-V01 GB162BHYAAMLA-V01 GB162BHYBAMDB-V01 GB162BHYBBMUB-V01 GB162BHYAAMUA-V01 GB162BHYBBNDA-V01 GB162BHGAAMLA-V01 GB162BHGAAMLB-V01 GB162BHGABMLA-V01 GB162BHGABMLB-V01 GB162BNYAANDA-V01 GB162BNGAANDB-V01 GB162BNGAANLB-V01 GB162BHYBBMDB-V01 GB162BHYBANUB-V01 GB162
Description	CAP,TANT,4.7uF,25V,10% CRYSTAL,6.000MHZ,HC49/US,32PF CRYSTAL,6.000MHZ,HC49/US, SERIES CRYSTAL,6.500MHZ,HC49/US,20PF CRYSTAL,7.3728MHZ,HC49/US,20PF LOW PROFILE CRYSTAL,8.00MHZ,HC49/US,20PF LOW PROFILE CRYSTAL,11.0592MHZ,HC49/US, 32PF,LOW PROFILE CRYSTAL,9.8304MHZ,HC49/US,20PF LOW PROFILE CRYSTAL,9.216MHZ,HC49/US,20PF CRYSTAL,20.480MHZ,HC49/US, 20PF CRYSTAL,11.0592MHZ,HC49/US, 20PF,LOW PROFILE CRYSTAL,6.144MHZ,HC49/US,32PF CRYSTAL,7.68MHZ,HC49/US,20PF LOW PROFILE CRYSTAL,8.000MHZ,HC49/US,18PF CRYSTAL,8.00MHZ,HC49/US,18PF LOW PROFILE CRYSTAL,8.00MHZ,HC49/US,32PF LOW PROFILE CRYSTAL,1.8432MHZ,HC-49/UA, 13pf CRYSTAL,19.6608MHZ,HC-49/U, 20PF AP,TANT,CHIP,3216,6.3V,10%, 10UF,LOW ESR (10) AP,TANT,CHIP,3216,10VOLTS, 10%,15UF, (10) AP,TANT,CHIP,3216,10VOLTS, 10%,4.7UF, (10) AP,TANT,CHIP,3528,16VOLTS, 10%,10UF, (10) AP,TANT,CHIP,3528,10VOLTS, 10%,47UF, (10) AP,TANT,CHIP,6032,25VOLTS, 10%,10UF, (10) AP,TANT,CHIP,6032,10VOLTS, 10%,100UF, (10) AP,TANT,CHIP,6032,16VOLTS, 10%,22UF, (10) AP,TANT,CHIP,6032,16VOLTS, 10%,47UF, (10) AP,TANT,CHIP,7343,10VOLTS, 10%,100UF, (10) AP,TANT,CHIP,7343H,16VOLTS, 10%,100UF,D PKG (10) AP,TANT,CHIP,7343,15UF,10%, 35VOLTS,0300MILLIOHM, (10) AP,TANT,CHIP,7343,10VOLTS, 10%,150UF, (10) AP,TANT,CHIP,7343,25VOLTS, 10%,22UF, (10) AP,TANT,CHIP,7343,20VOLTS, 10%,33UF, (10) AP,TANT,CHIP,7343,16VOLTS, 10%,47UF, (10) AP,TANT,CHIP,7343H,16VOLTS, 10%,100UF, (10) AP,TANT,CHIP,7343H,35VOLTS, 10%,22UF, (10) AP,TANT,CHIP,7343H,10VOLTS, 10%,220UF, (10) CRYSTAL,13.5168MHZ,HC-49/UA, SERIES CRYSTAL,22.1184mhz,HC-49/U, SERIES CRYSTAL,20.00MHZ,HC-49/UA,20PF CRYSTAL,4.9152MHZ,HC-49/UA, 20PF CRYSTAL,2.500MHZ,HC-49/U, SERIES CRYSTAL,15.360MHZ,HC49/US,20PF OSCILLATOR,18.432MHZ,FULL CAN, TTL,30MA,10NS CRYSTAL,18.432MHZ,HC49/US,20PF LOW PROFILE AP,TANT,CHIP,7343H,25VOLTS, 10%,33UF, (10) CRYSTAL,18.00MHZ,HC-49/UA,20PF TOOL KIT,12 PCS,COMPUTER SERV. AP,TANT,CHIP,7343H,20VOLTS, 10%,68UF, (10) OSCILLATOR,19.6608MHZ,FULL CAN ,TTL,30MA,10NS OSCILLATOR,9.216MHZ,FULL CAN, TTL,30MA,10NS SPEAKER,SQ,FERRITE,2.6",4ohm, 3W,300Hz-14KHz,PAPER OSCILLATOR,9.8304MHZ,FULL CAN, TTL,30MA,10NS CAP,TANT,47uF,16V,10% CAP,TANT,6.8uF,35V,10% BOOTS)CAP,RJ45 PLUG GRAY (10) BOOTS)CAP,RJ45 PLUG GREEN (10) CRYSTAL,2.000MHZ,HC-49/CA, SERIES 规格液晶模块 CRYSTAL,9.216MHZ,HC49/US, LOW PROFILE 规格液晶模块 CRYSTAL,9.000MHZ,HC49/US, SERIES 规格液晶模块 CRYSTAL,19.6608MHZ,HC49/US, 20PF 规格液晶模块 CRYSTAL,19.6608MHZ,HC49/US, SERIES 规格液晶模块 OSC,TTL,FULL SIZE,66.666MHZ, 70MA,5NS 规格液晶模块 OSCILLATOR,5.000MHZ,FULL CAN, TTL,15MA,10NS 规格液晶模块 OSCILLATOR,5.0688MHZ,HALF CAN, TTL,15MA,10NS 规格液晶模块 OSCILLATOR,16.257MHZ,HALF CAN, TTL,30MA,10NS 规格液晶模块 CRYSTAL,11.52MHZ,HC-49/UA, SERIES 规格液晶模块 CRYSTAL,16.000MHZ,HC49/US,20PF 规格液晶模块 OSCILLATOR,4.9152MHZ,FULL CAN, TTL,15MA,10NS 规格液晶模块
File Size	276.84K / 23 Page	View it Online	Download Datasheet

					意法半导 EEPROM STMicroelectronics N.V.
Part No.	M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
Description	16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM Microprocessor Crystal; Frequency:22.1184mhz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes CRYSTAL 9.84375MHZ 10PF SMD UHF power transistor NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; G_UM: 7 dB; G_UM @ f1: 7 dB; I_C: 250 mA; P_tot: 250 mW; Polarity: NPN ; VCEO max: 8 V CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD MMIC variable gain amplifier AB 3C 3#12 SKT RECP Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator Schottky barrier double diodes - C_d max.: 100@VR=4V pF; Configuration: dual c.a. ; I_F: 1 A; I_FSM max: 10 A; I_R max: 1@VR=25V mA; V_Fmax: 450@IF=1A mV; V_R: 25 V XTL, OSC, 50.000 MHZ, 100PPM Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Schottky barrier diode - C_d max.: 10@VR=1V pF; Configuration: single ; I_F max: 200 mA; I_FSM max: 300 A; I_R max: 2.3@VR=25VA; V_Fmax: 400@IF=10mA mV; V_R max: 30 V CONNECTOR ACCESSORY PNP/PNP matched double transistors IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP AB 17C 17#16 PIN RECP 45 V, 100 mA NPN general-purpose transistors NPN/PNP general purpose transistor - Description: Matched Pair IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015 CRYSTAL 4.897MHZ 20PF SMD Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 650 V Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 800 V POT 200 OHM 3/4 RECT CERM MT Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 500 V Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 600 V Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes PowerMOS transistor Logic level TOPFET - @ V_IS: 5 V; I_D: 15 A; Number of pins: 3 ; R_DS(on): 0.125 mOhm; V_DSmax: 50 V Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes CRYSTAL 6.7458MHZ 20PF SMD Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes RES ARRAY 24 OHM 8TRM 4RES SMD SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300 High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V AB 4C 4#12 PIN PLUG Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Silicon PIN diode NPN 14 GHz wideband transistor PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V HDWR PLATE SER 3 FRNT MNT BLK OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V 16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM 8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
File Size	144.80K / 25 Page	View it Online	Download Datasheet

For 22 1184mhz Found Datasheets File :: 21+ Page :: | 1 | <2> | 3 |

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