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900v 20ma Datasheet PDF File

For 900v 20ma Found Datasheets File :: 67 Search Time::1.109ms
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					Dynex Semiconductor
Part No.	GP401DDS18
OCR Text	...tions IC = 400A VGE = 15V VCE = 900v RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 900 330 180 500 200 200 80 250 70 Max. 1100 400 250 650 400 230 100 Units ns ns mJ ns ns mJ C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOF...
Description	Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
File Size	150.93K / 11 Page	View it Online	Download Datasheet

					Dynex Semiconductor http://
Part No.	DIM400DDM17-A000 DIM400DDM17-A000-15
OCR Text	...recovery energy IF = 400A VCE = 900v dIF/dt = 3000A/s IC = 400A VGE = 15V VCE = 900v RG(ON) = 4.7 RG(OFF) = 4.7 LS ~ 100nH 120 250 250 150 100 230 70 mJ ns ns mJ C A mJ Test Conditions Min Typ. 1150 100 Max Units ns ns Tcase = 125C unles...
Description	Dual Switch IGBT Module
File Size	275.12K / 8 Page	View it Online	Download Datasheet

					Sanyo
Part No.	2SC4031 0425
OCR Text	900v/20ma Switching Applications Features * High breakdown voltage (VCEO min=900v). * Small Output Capacitance (Cob typ=1.6pF). * Wide ASO (adoption of MBIT process). * High reliability (adoption of HVP process). Package Dimensions un...
Description	NPN Triple Diffused Planar Silicon Transistor 900v/20ma Switching Applications From old datasheet system
File Size	98.83K / 4 Page	View it Online	Download Datasheet

					Dynex Semiconductor Ltd.
Part No.	DIM400DCM17-A000
OCR Text	...tions IC = 400A VGE = 15V VCE = 900v RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 1150 100 120 250 250 150 4.5 250 100 530 230 160 70 Max. Units ns ns mJ ns ns mJ C C C A A mJ mJ Caution: This device is sensitive to electrostatic discharge...
Description	IGBT Chopper Module
File Size	178.98K / 11 Page	View it Online	Download Datasheet

					DYNEX[Dynex Semiconductor] Dynex Semiconductor, Ltd.
Part No.	GP401DDS18
OCR Text	...tions IC = 400A VGE = 15V VCE = 900v RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 900 330 180 500 200 200 80 250 70 Max. 1100 400 250 650 400 230 100 Units ns ns mJ ns ns mJ C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOF...
Description	Low VCE(SAT) Dual Switch IGBT Module Preliminary Information Low VCE(SAT) Dual Switch IGBT Module Preliminary Information 400 A, 1800 V, N-CHANNEL IGBT
File Size	159.60K / 11 Page	View it Online	Download Datasheet

					DYNEX[Dynex Semiconductor]
Part No.	GP400DDS18
OCR Text	...tions IC = 400A VGE = 15V VCE = 900v RG(ON) = RG(OFF) = 2.2 L ~ 100nH Min. Typ. 900 280 80 500 200 140 80 250 70 Max. 1100 350 100 650 400 180 100 Units ns ns mJ ns ns mJ C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF...
Description	Dual Switch IGBT Module Preliminary Information
File Size	154.43K / 11 Page	View it Online	Download Datasheet

					FAIRCHILD[Fairchild Semiconductor]
Part No.	KSC5042
OCR Text	900v Small Cob =2.8pF(Typ.) Wide S.O.A High reliability 1 TO-220 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon...20ma, IB = 4mA IC=20ma, IB = 4mA VCB=100V, f = 1MHz 2.8 30 5 2 V V pF Min. 1500 900 5 10 10 Typ. Max...
Description	NPN Triple Diffused Planar Silicon Transistor High Voltage Switchihg Dynamic Focus Application
File Size	45.30K / 4 Page	View it Online	Download Datasheet

					Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	KSC5042M KSC5042MSTU
OCR Text	...itter Breakdown Voltage : BVCEO=900v Small Cob =2.8pF (Typ.) Wide S.O.A High reliability 1 TO-126 2.Collector 3.Base 1. Emitter NP...20ma, IB = 4mA IC = 20ma, IB = 4mA VCB = 100V, f = 1MHz 2.8 30 5 2 V V pF Min. 1500 900 5 10 10 Typ....
Description	High Voltage Switchihg Dynamic Focus Application 0.1 A, 900 V, NPN, Si, POWER TRANSISTOR, TO-126 NPN Triple Diffused Planar Silicon Transistor
File Size	47.11K / 4 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	FP35R12W2T4 INFINEONTECHNOLOGIESAG-FP35R12W2T4
OCR Text	...lussverhalten scdata v??15v,v??=900v v???=v???l??di/dt i?? 130 a ty?=150c t?10s, innererw?rmewiderstand thermalresistance,junctiontoca...20ma,v??=v??,ty?=25c v?? 5,2 5,8 6,4 v gateladung gatecharge v??=15v...+15v q? 0,27 c internergate...
Description	EasyPIM?/a> module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
File Size	533.90K / 12 Page	View it Online	Download Datasheet

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