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methodology Datasheet PDF File

For methodology Found Datasheets File :: 1655 Search Time::1.313ms
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				Freescale Semiconductor, Inc
Part No.	MW6IC1940GNBR1
OCR Text	...rotection Characteristics Test methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level ...
Description	RF LDMOS Wideband Integrated Power Amplifier
File Size	845.42K / 17 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MW7IC2040GNR1 MW7IC2040N MW7IC2040NBR1 MW7IC2040NR1
OCR Text	...protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iii (minimum) table 4. moisture sensitivity level ...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	1,024.57K / 29 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MW6S010GNR1 MW6S010N
OCR Text	...to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mw6s010n rev. 5, 6/2009 freescale semiconductor technical data mw6...
Description	RF Power Field Effect Transistors
File Size	794.71K / 20 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	MW6S004N MW6S004NT1
OCR Text	...protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) 1. mttf calculator available at http:...
Description	RF Power Field Effect Transistor
File Size	542.00K / 13 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MW7IC2425NR1
OCR Text	...rotection Characteristics Test methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) II (Minimum) Table 4. Moisture Sensitivity Leve...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	834.92K / 21 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	9C12063A10R0FKHFT ATC100B3R0BT500XT ATC100B4R3BT500XT ATC100B4R7BT500XT WCR08051KFI C5750X5R1H106M RO4350 222212018221 MRF8S9102NR3
OCR Text	...rotection Characteristics Test methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level T...
Description	RF Power Field Effect Transistor
File Size	806.79K / 16 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6V10010NR4
OCR Text	... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (c) Freescale Semiconductor, Inc., 2008--2010. All rights reserved. MRF6V10010NR4...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	638.72K / 10 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	0603CS-30NXJLW GJM1555C1HR80BB01D GRM188R71H104KA93D MMG15241HT1 GJM1555C1HR70BB01D GJM1555C1H5R6DB01D GJM1555C1H1R5CB01D IS680-338 GRM188RC1H560GA01D
OCR Text	... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (c) Freescale Semiconductor, Inc., 2010. All rights reserved. MMG15241HT1 1 RF...
Description	Enhancement Mode pHEMT Technology (E-pHEMT)
File Size	759.51K / 18 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21S260W12NR3
OCR Text	...protection characteristics test methodology class human body model (per jesd22--a114) 2 charge device model (per jesd22--c101) c3 table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ip...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	332.74K / 14 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6S18060NBR1 MRF6S18060NR1 MRF6S18060NR108
OCR Text	... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. MRF6S18060NR1 ...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	762.03K / 21 Page	View it Online	Download Datasheet

For methodology Found Datasheets File :: 1655 Search Time::1.313ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |