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00022 E000919 STM9433 1N4003 SR3050P LHV37H24 3G3MV EL2228
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    2SA2004

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2004
OCR Text ...tter saturation voltage Turn-on time Storage time Fall time VCE(sat) VBE(sat) ton tstg tf Conditions VCB = -60 V, IE = 0 VCE = -60 V, IE = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = - 0.1 A VCE = -2 V, IC = -5 A IC = -5 A, IB = - 0.25 A IC = -5...
Description    Silicon PNP epitaxial planer type

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    2SA2010

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2010
OCR Text ...ce Transition frequency Turn-on time *2 Storage time *2 Turn-off time *2 VCB = 10 V, IE = 0, f = 1 MHz VCB = -10 V, IE = 50 mA f = 200 MHz -15 -15 -5 200 100 -140 -270 40 180 35 110 10 -320 mV mV pF MHz ns ns ns 560 Min Typ Max - 0.1 Unit A...
Description    Silicon PNP epitaxial planer type

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    2SA2011 2SC5564

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SA2011 2SC5564
OCR Text ...-Base Breakdown Voltage Turn-ON time Storage time Fall time VCE(sat) VBE(sat) IC=(-)3A, IB=(-)60mA IC=(-)1.5A, IB=(-)30mA (-)15 (-12) 15 (-)5 (35)30 (110) 190 15 Ratings min typ (-)120 (-190) 200 (-)0.85 max (-)180 (-290) 300 (-)1.2 Unit mV...
Description    DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

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    2SA2012 2SC5565

SANYO[Sanyo Semicon Device]
Part No. 2SA2012 2SC5565
OCR Text ...-Base Breakdown Voltage Turn-ON time Storage time Fall time VBE(sat) IC=(-)1.5A, IB=(-)30mA (-30) 40 (-)30 (-)5 (50)30 (270) 300 (25)15 Ratings min typ (-140) 125 (-)170 (-)0.83 max (-210) 190 (-)260 (-)1.2 Unit mV mV mV V V V V V ns ns ns ...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2013 2SC5566

SANYO[Sanyo Semicon Device]
Part No. 2SA2013 2SC5566
OCR Text ...-Base Breakdown Voltage Turn-ON time Storage time Fall time VBE(sat) IC=(-)2A, IB=(-)100mA (-50) 80 (-)50 (-)6 (30)35 (230) 300 (15)20 Ratings min typ (-105) 85 (-200) 150 (-)0.89 max (-180) 130 (-340) 225 (-)1.2 Unit mV mV mV mV V V V V V ...
Description    DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications

File Size 48.85K  /  5 Page

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    2SA2016 2SC5569

SANYO[Sanyo Semicon Device]
Part No. 2SA2016 2SC5569
OCR Text ...-Base Breakdown Voltage Turn-ON time Storage time Fall time VBE(sat) IC=(-)2A, IB=(-)40mA (-50) 80 (-)50 (-)6 (40)30 (225) 420 25 Ratings min typ (-230) 160 (-240) 110 (-)0.83 max (-390) 240 (-400) 170 (-)1.2 Unit mV mV mV mV V V V V V ns n...
Description    DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications 直流/直流转换器应

File Size 48.94K  /  5 Page

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    2SA2022 2SC5610

Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Part No. 2SA2022 2SC5610
OCR Text ...-Base Breakdown Voltage Turn-ON time Storage time Fall time Symbol VCE(sat) VBE(sat) Conditions IC=(-)2.5A, IB=(-)125mA IC=(-)2.5A, IB=(-)125mA (-50) 60 (-)50 (-)6 30 (250) 300 15 Ratings min typ (-150) 130 (-)0.85 max (-300) 260 (-)1.2 Uni...
Description NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR,BJT,NPN,50V V(BR)CEO,7A I(C),TO-220ML
From old datasheet system

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    2SA2023 2SC5611

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2023 2SC5611
OCR Text ...-Base Breakdown Voltage Turn-ON time Storage time Fall time Symbol V(BR)CBO IC=(-)1mA, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO ton tstg tf IE=(-)1mA, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit Condi...
Description 60V / 5A High-Speed Switching Applications 0V / 5A条高速开关应
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications
PNP Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications

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    2SA2025

SANYO[Sanyo Semicon Device]
Part No. 2SA2025
OCR Text ...-Base Breakdown Voltage Turn-ON time Storage time Fall time Symbol V(BR)CBO IC=-10A, IE=0 V(BR)CEO IC=-1mA, RBE= V(BR)EBO ton tstg tf IE=-10A, IC=0 See specified Test Circuit See specified Test Circuit See specified Test Circuit Conditions ...
Description PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2031 2SC5669

SANYO[Sanyo Semicon Device]
Formosa MS
Sanyo Electric Co.,Ltd.
Part No. 2SA2031 2SC5669
OCR Text ...-Base Breakdown Voltage Turn-On time Storage time Fall time Symbol fT Cob VBE VCE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=(--)5V, IC=(-)1A VCB=(--)10V, f=1MHz VCE=(--)5V, IC=(-)7.5A IC=(--)7.5A, IB=(--)0.75A IC=(--)5mA, I...
Description NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications
PNP Epitaxial Planar Silicon Transistor 230V / 15A, AF100W Output Applications
230V / 15A/ AF100W Output Applications

File Size 33.17K  /  4 Page

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