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  30v 12a Datasheet PDF File

For 30v 12a Found Datasheets File :: 1864    Search Time::1.828ms    
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    IRHE57034

International Rectifier
Part No. IRHE57034
OCR Text ...= -20V VGS =12V, ID = 12a VDS = 30v VDD = 30v, ID = 12a, VGS =12V, RG = 7.5 ns nH Measured from the center of drain pad to center of source pad V GS = 0V, VDS = 25V f = 1.0MHz C iss C oss C rss Input Capacitance Output Capaci...
Description RADIATION HARDENED POWER MOSFET

File Size 117.18K  /  8 Page

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    IRHF57034

International Rectifier
Part No. IRHF57034
OCR Text ...= -20V VGS =12V, ID = 12a VDS = 30v VDD = 30v, ID = 12a RG = 7.5 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (...
Description RADIATION HARDENED POWER MOSFET

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOD407
OCR Text ...ff delaytime v gs =-10v, v ds =-30v, r l =2.5 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parame...12a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. coppe...
Description P-Channel Enhancement Mode Field

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    AOD4102 AOD410210 AOI4102

Alpha & Omega Semiconductors
Part No. AOD4102 AOD410210 AOI4102
OCR Text 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 19a r ds(on) (at v gs =10v) < 37m w r ds(on) (...12a reverse transfer capacitance i f =12a, di/dt=100a/ m s v gs =0v, v ds =15v, f=1mhz switching par...
Description 30v N-Channel MOSFET

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOD603A
OCR Text ...di/dt=100a/ m s v gs =0v, v ds =30v, f=1mhz switching parameters n-channel electrical characteristics (t j =25c unless otherwise noted) stat...12a v gs =4.5v, i d =8a v gs =10v, v ds =30v, r l =2.5 w , r gen =3 w gate resistance v gs =0v, v ds...
Description 60V Complementary MOSFET

File Size 1,003.86K  /  11 Page

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    AOD603A

Alpha & Omega Semiconductors
Part No. AOD603A
OCR Text ...di/dt=100a/ m s v gs =0v, v ds =30v, f=1mhz switching parameters n-channel electrical characteristics (t j =25c unless otherwise noted) stat...12a v gs =4.5v, i d =8a v gs =10v, v ds =30v, r l =2.5 w , r gen =3 w gate resistance v gs =0v, v ds...
Description 60V Complementary MOSFET

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOI4102
OCR Text 30v n-channel mosfet v ds i d (at v gs =10v) 19a r ds(on) (at v gs =10v) < 37m w r ds(on) (at v gs = 4.5v) < 64m w symbol v ds...12a reverse transfer capacitance i f =12a, di/dt=100a/ m s v gs =0v, v ds =15v, f=1mhz switching par...
Description 30v N-Channel MOSFET

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOI444
OCR Text ...-off delaytime v gs =10v, v ds =30v, r l =2.5 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =30v, i d =12a gate source charge gate drain charge total gate charge m ? i s =1a,...
Description 60V N-Channel MOSFET

File Size 507.81K  /  6 Page

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    AOD444

Alpha & Omega Semiconductors
Part No. AOD444
OCR Text ...67 14 0.74 1 12 450 VGS=0V, VDS=30v, f=1MHz VGS=0V, VDS=0V, f=1MHz 61 27 1.35 7.5 VGS=10V, VDS=30v, ID=12a 3.8 1.2 1.9 4.2 VGS=10V, VDS=30v, RL=2.5, RGEN=3 IF=12a, dI/dt=100A/s 3.4 16 2 27.6 30 35 2 10 5 540 85 60 2.4 Min 60 1 5 100 3 Typ M...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 148.63K  /  5 Page

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    AOI444 AOD444

Alpha & Omega Semiconductors
Part No. AOI444 AOD444
OCR Text ...-off delaytime v gs =10v, v ds =30v, r l =2.5 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =30v, i d =12a gate source charge gate drain charge total gate charge m ? i s =1a,...
Description 60V N-Channel MOSFET

File Size 245.98K  /  6 Page

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For 30v 12a Found Datasheets File :: 1864    Search Time::1.828ms    
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