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Guangdong Kexin Industrial Co.,Ltd
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| Part No. |
2SK3899
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| OCR Text |
...VDD = 48V VGS = 10 V ID =84A ID=42a,VGS(on)=10V,RG=0 ,VDD=30V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=42a VGS=10V,ID=42a VGS=4.5V,ID=42a 1.5 35 2.0 70 4.2 4.9 5500 1050 350 19 13 91 10 96 18... |
| Description |
MOS Field Effect Transistor
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| File Size |
39.55K /
1 Page |
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Mean Well Enterprises C...
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| Part No. |
NSD10-48D15
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| OCR Text |
...-15v 12v 15v 5v 12v 15v 1a 1a 0.42a 0.33a 1a 0.42a 0.33a 0.42a 0.33a 1a 0.42a 0.33a 0.05 ~ 1a 0.05 ~ 1a 0.05 ~ 1a 0.02 ~ 0.42a 0.02 ~ 0.42a 0.016 ~ 0.33a 0.016 ~ 0.33a 0.05 ~ 1a 0.02 ~ 0.42a 0.02 ~ 0.42a 0.016 ~ 0.33a 0.016 ~ 0.33a 10w 10w ... |
| Description |
10W DC-DC Regulated Dual Output
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| File Size |
241.24K /
2 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IPB15N03L IPP15N03L 15N03L
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| OCR Text |
...Tjmax2) Reverse diode dv/dt
IS=42a, VDS=-V, di/dt=200A/s, Tjmax=175C
Gate source voltage Power dissipation
TC=25C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-01-17
IPP15N03L IPB15N03L
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| Description |
IPP15N03L
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42a, LL
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.9mOhm, 42a, LL
OptiMOS Buck converter series
OptiMOS Buck converter series
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| File Size |
448.37K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
RF1S42N03LSM RFP42N03L
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| OCR Text |
42a, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silic... |
| Description |
42a, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET 42 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
42a 30V 0.025 Ohm Logic Level N-Channel Power MOSFET
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| File Size |
111.83K /
8 Page |
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it Online |
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Microsemi
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| Part No. |
APT30M36B2LLG APT30M36LLLG
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| OCR Text |
... 2 (v gs = 10v, i d = 42a) zero gate voltage drain current (v ds = 300v, v gs = 0v) zero gate voltage drain current (v ds = 240v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold ... |
| Description |
MOSFET
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| File Size |
157.62K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
APT30M36B2FLLG APT30M36LFLLG
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| OCR Text |
... 2 (v gs = 10v, i d = 42a) zero gate voltage drain current (v ds = 300v, v gs = 0v) zero gate voltage drain current (v ds = 240v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold ... |
| Description |
FREDFETs
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| File Size |
158.63K /
5 Page |
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Microsemi
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| Part No. |
APTM50DHM65T3G
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| OCR Text |
...resistance v gs = 10v, i d = 42a 65 78 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 4 5 v i gss gate C source leakage current v gs = 30 v 100 na dynamic characteristics symbol characte... |
| Description |
Asymmetrical Bridge
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| File Size |
400.06K /
6 Page |
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it Online |
Download Datasheet |
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