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				STMICROELECTRONICS[STMicroelectronics]
Part No.	VN330SP VN330SP13TR VN330
OCR Text	...lue 45 -0.3 Internally Limited -6 10 10 2000 400 Internally Limited Internally Limited -55 to 150 Unit V V A A mA mA V mJ W o o C C ...L VI H V I(hyst.) I IN I LGND V ICL Parameter Input Low Level Voltage Input High Level Voltage (see ...
Description	QUAD HIGH SIDE SMART POWER SOLID STATE RELAY
File Size	68.64K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ496
OCR Text	...ower vs. Temperature Derating 1.6 Pch (W) Maximum Safe Operation Area -100 -30 I D (A) 1.2 -10 -3 Channel Dissipation Drain C...L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg ...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	49.68K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ504
OCR Text	... -10 V -8 V I D (A) -40 -4.5 V -6 V -5 V -4 V -30 -3.5 V -20 -3 V -10 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 Puls...L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.21K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ506 2SJ506L 2SJ506S
OCR Text	...8 V -20 -4.5 V Pulse Test -5 V -6 V -16 -4 V -12 Typical Transfer Characteristics -20 V DS = -10 V Pulse Test 25 C -16 -12 Drain...L), 2SJ506(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage -2 Drain to Source Satu...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ518
OCR Text	...ut Characteristics -5 -10 V -5 -6 V -5 V -4 V -3 Pulse Test Typical Transfer Characteristics V DS = -10 V Pulse Test I D (A) -3.5 V...L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg ...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	46.74K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ526
OCR Text	... 1MHz VGS = -10V, ID = -6A RL = 6 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate v...L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.48K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ527 2SJ527L 2SJ527S
OCR Text	...al Output Characteristics -5 V -6 V -5 -4 V (A) Pulse Test -3.5 V -4 Typical Transfer Characteristics V DS = -10 V Pulse Test -3 ID Drain Current -3 Drain Current -2 -3 V -1 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.03K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ528 2SJ528L 2SJ528S
OCR Text	...Characteristics -10 -4 V -10 V -6 V -5 V -10 Pulse Test (A) -8 Typical Transfer Characteristics V DS = -10 V Pulse Test I D (A) -8 ...L),2SJ528(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage -2.0 Drain to Source Sat...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.33K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ529 2SJ529L 2SJ529S
OCR Text	... 1MHz VGS = -10V, ID = -5A RL = 6 Note4 2 2SJ529(L),2SJ529(S) Main Characteristics Power vs. Temperature Derating 40 Pch (W) I D (A) -100 -50 30 -20 -10 -5 -2 -1 -0.5 Operation in this area is limited by R DS(on) D C Maximum Sa...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	51.89K / 9 Page	View it Online	Download Datasheet

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