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  800nm Datasheet PDF File

For 800nm Found Datasheets File :: 54    Search Time::1.578ms    
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    Matsshita / Panasonic
Part No. PNZ330CL PNZ330CLPN330CL
OCR Text ...0% of its initial value) P = 800nm 50 Note) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D) ;;; ; ;;; ; Note) The part number in the parenthesis shows conventional part number. 1 PIN Phot...
Description PNZ330CL (PN330CL) - PIN Photodiode
PIN Photodiodes

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    PNZ330CL

PANASONIC[Panasonic Semiconductor]
Part No. PNZ330CL
OCR Text ...0% of its initial value) P = 800nm 50 Note) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D) ,,, , ,,, , 1 PIN Photodiodes PNZ330CL IL -- L 10 3 VR = 10V Ta = 25C 16 Ta = 25C 14 10 2 1...
Description PIN Photodiode

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    Matsshita / Panasonic
Part No. PNZ327 PN327
OCR Text ...measurement circuit Sig.IN P = 800nm 50 RL VR = 10V (Input pulse) Sig.OUT (Output pulse) td tr tf 90% 10% td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fa...
Description Opto-Electronic Device - Photo Detectors - PIN Photodiodes

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    PANASONIC[Panasonic Semiconductor]
Part No. PNA3602L
OCR Text ...0% of its initial value) P = 800nm 50 ,,, , ,,, , 1 PNA3602L PIN Photodiodes IL -- L 10 2 10 3 10 VR = 10V ID -- Ta 20 IL -- Ta 16 IL (A) ID (nA) IL (A) Photo current 10 2 10 1 12 Photo c...
Description PIN Photodiode

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    PANASONIC[Panasonic Semiconductor]
Part No. PNZ3108
OCR Text ...mitting diode light source ( = 800nm) *3 V is the potential difference between anodes A1 and A2. a *4 a = | (I -I )/(I +I ) | 12 12 Note : Incident light is at the position 100 m from the reference position. The reference position is the p...
Description PIN Photodiode

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    PANASONIC[Panasonic Semiconductor]
Part No. PNZ3112
OCR Text ...mitting diode light source ( = 800nm) *3 V is the potential difference between anodes A1 and A2. a *4 a = | (I -I )/(I +I ) | 12 12 Note :Incident light is at the position 100 m from the reference position. The reference position is the po...
Description PIN Photodiode

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    PNZ327

Panasonic Semiconductor
Part No. PNZ327
OCR Text ...measurement circuit Sig.IN P = 800nm 50 RL VR = 10V (Input pulse) Sig.OUT (Output pulse) td tr tf 90% 10% td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fa...
Description PIN Photodiode

File Size 350.37K  /  4 Page

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    HAMAMATSU[Hamamatsu Corporation]
Part No. R5108
OCR Text ...at 1060nm Luminous B Radiant at 800nm Anode Sensitivity Luminous C Gain C Anode Dark Current D (after 30min. storage in the darkness) Time Response Anode Pulse Rise Time Electron Transit Time F E ) Min. Typ. 0.04 25 2.2 Max. Uni...
Description PHOTOMULTlPLlER TUBE

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    R294906

Hamamatsu Corporation
Part No. R294906
OCR Text ...0 TPMSB0159EB 160 140 800nm 600nm 120 1000 ANODE SENSITIVITY (%) 100 400nm DARK COUNTS (s-1) 80 100 60 40 10 20 0 -30 -20 -10 0 +10 +20 +30 +40 +50 0 -30 -20 ...
Description PHOTOMULTIPLIER TUBE

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    TPS70307 TPS704F TPS703 TPS704

Toshiba Semiconductor
Part No. TPS70307 TPS704F TPS703 TPS704
OCR Text ...S703(F): > 700nm TPS704(F): > 800nm * * * * High sensitivity TPS703(F): ISC = 1.5A (typ.) TPS704(F): ISC = 0.9A (typ.) High speed response: tr, tf = 100ns (typ.) Wide half value angle: 1/2 = 65 (typ.) TLN115A(F), etc. are available as hig...
Description Lead(Pb)-Free Various Kinds Of Remote Control Systems Optical Communication

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For 800nm Found Datasheets File :: 54    Search Time::1.578ms    
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