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TY Semiconductor Co., Ltd
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Part No. |
2SA1813
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Description |
Very small-sized package. adoption of FBET process. High DC current gain (hFE=500 to 1200).
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File Size |
68.07K /
1 Page |
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it Online |
Download Datasheet |
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TY Semicondutor TY Semiconductor Co., Ltd
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Part No. |
2SC5310
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Description |
NPN Epitaxial Planar Silicon Transistors adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
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File Size |
119.99K /
2 Page |
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it Online |
Download Datasheet |
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TY Semicondutor TY Semiconductor Co., Ltd
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Part No. |
2SB1302 SB1302
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Description |
PNP Epitaxial Planar Silicon Transistors adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
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File Size |
110.31K /
2 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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Part No. |
2SA1724
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Description |
High fT (fT = 1.5GHz typ). High Current (IC = 300mA). adoption of FBET process.
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File Size |
430.30K /
3 Page |
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it Online |
Download Datasheet |
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TY Semicondutor TY Semiconductor Co., Ltd
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Part No. |
2SC3646
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Description |
High-Voltage Switching Applications adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
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File Size |
561.11K /
3 Page |
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it Online |
Download Datasheet |
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TY Semicondutor TY Semiconductor Co., Ltd
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Part No. |
2SC3645
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Description |
High-Voltage Switching Applications adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
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File Size |
529.25K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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