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				DYNEX[Dynex Semiconductor]
Part No.	DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49
OCR Text	...ak reverse current Total stored charge Reverse recovery current Threshold voltage Slope resistance Conditions At 1800A peak, Tcase = 25oC At VRRM, Tcase = 150oC IF = 1000A, dIRR/dt = 3A/s Tcase = 150C, VR = 100V At Tvj = 150C At Tvj = 150C ...
Description	Rectifier Diode
File Size	96.53K / 7 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor]
Part No.	DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text	...ak reverse current Total stored charge Reverse recovery current Threshold voltage Slope resistance Conditions At 1800A peak, Tcase = 25oC At VRRM, Tcase = 150oC IF = 1000A, dIRR/dt = 3A/s Tcase = 150C, VR = 100V At Tvj = 150C At Tvj = 150C ...
Description	Rectifier Diode
File Size	94.33K / 7 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor Dallas Semiconducotr DALLAS[Dallas Semiconductor]
Part No.	DS1302 DS1302N DS1302S DS1302S-16 DS1302SN DS1302SN-16 DS1302Z DS1302ZN
OCR Text	charge Timekeeping Chip www.dalsemi.com FEATURES Real time clock counts seconds, minutes hours, date of the month, month, day of the week, and year with leap year compensation valid up to 2100 31 x 8 RAM for scratchpad data storage Ser...
Description	0 TIMER(S), REAL TIME CLOCK, PDSO8 Trickle charge Timekeeping Chip 0 TIMER(S), REAL TIME CLOCK, PDIP8
File Size	215.68K / 14 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP20T15GI-HF
OCR Text	...=0v - - + 100 na q g total gate charge i d =15a - 48 77 nc q gs gate-source charge v ds =120v - 7.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 18 - nc t d(on) turn-on delay time v ds =75v - 12 - ns t r rise time i d =15a - 30 - ns ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	93.27K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS6680S
OCR Text	...ding a low RDS(ON) and low gate charge. The FDS6680S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS6680S as the low-side switch in a synchronous rectifier is indistinguishab...
Description	30V N-Channel PowerTrench SyncFET⑩
File Size	220.76K / 9 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4447
OCR Text	...s(on) , and ultra-low low gate charge. this device is suitable for use as a load switch. the device is esd protected. standard product ao4447 is pb-free (meets rohs & sony 259 specifications). ao4447l is a green product ordering optio...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	510.71K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	2SK2445
OCR Text	...t off ? 180 ? ns total gate charge (gate ? source plus gate ? drain) q g ? 110 ? gate ? source charge q gs ? 70 ? gate ? drain (?miller?) charge q gd v dd 48 v, v gs = 10 v, i d = 50 a ? 40 ? nc source ? drain ratin...
Description	TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (PI-MOSV) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
File Size	320.94K / 6 Page	View it Online	Download Datasheet

				http://
Part No.	AO6401A
OCR Text	...e excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. thisdevice is suitable for use as a load switch or in pwm applications. ao6401a is pb-free (meets rohs & sony 259 specifications). d tsop6 top view g d ...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	769.52K / 4 Page	View it Online	Download Datasheet

				http:// Alpha & Omega Semiconductors
Part No.	AON7900
OCR Text	...z turn-off fall time total gate charge v gs =10v, v ds =15v, i d =8a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =8a, di/dt=500a/ s maximum body-diode continuous current input capacitance o...
Description	30V Dual Asymmetric N-Channel MOSFET
File Size	346.50K / 10 Page	View it Online	Download Datasheet

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