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For hyper Found Datasheets File :: 1783    Search Time::4.235ms    
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Part No. K4E151611C-TC50
OCR Text ... within the same row, so called hyper page mode. power supply voltage (+5.0v or +3.3v), refresh cycle (1k ref. or 4k ref.), access time (-45, -5 0 or -6 0 ), power consumption(normal or low power) and package type(soj or tsop-ii) are optio...
Description 1M X 16 EDO DRAM, 50 ns, PDSO44
File Size 558.18K  /  35 Page

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    SIEMENS AG
Part No. HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514175BJ-60
OCR Text ...5 version) 104 ns (-60 version) hyper page mode (EDO) cycle time 20 ns (-50 & -55 version) 25 ns (-60 version) High data rate 50 MHz (-50 & -55 version) 40 MHz (-60 version) Single + 5 V ( 10 %) supply with a built-in VBB generator * Low Po...
Description 256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
File Size 180.37K  /  22 Page

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    M53233200CE0

Samsung Semiconductor
Part No. M53233200CE0
OCR Text ...H, RAS cycling @tRC=min) ICC4 : hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC=min) ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) I(IL) : Input Leakage Current (An...
Description (M53233200CE0/CJ0-C) DRAM Module
File Size 565.61K  /  21 Page

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    M53233200BE0

Samsung Semiconductor
Part No. M53233200BE0
OCR Text ...H, RAS cycling @tRC=min) ICC4 : hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC=min) ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) I(IL) : Input Leakage Current (An...
Description (M53233200BE0/BJ0-C) DRAM Module
File Size 565.95K  /  21 Page

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    M53231600CE0

Samsung Semiconductor
Part No. M53231600CE0
OCR Text ...H, RAS cycling @tRC=min) ICC4 : hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC=min) ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) I(IL) : Input Leakage Current (An...
Description (M53231600CE0/CJ0-C) DRAM Module
File Size 556.57K  /  21 Page

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    M53230804CT0-C

Samsung Semiconductor
Part No. M53230804CT0-C
OCR Text ...IH, RAS cycling @tRC=min) ICC4 :hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC=min) ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) I(IL) : Input Leakage Current (An...
Description (M53230804CT0-C/CY0) DRAM Module
File Size 554.37K  /  21 Page

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    M5M44405CJ M5M44405CJ-5 M5M44405CJ-5S M5M44405CJ-6 M5M44405CJ-6S M5M44405CJ-7 M5M44405CJ-7S M5M44405CTP-5 M5M44405CTP-5S

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. M5M44405CJ M5M44405CJ-5 M5M44405CJ-5S M5M44405CJ-6 M5M44405CJ-6S M5M44405CJ-7 M5M44405CJ-7S M5M44405CTP-5 M5M44405CTP-5S M5M44405CTP-6 M5M44405CTP-6S M5M44405CTP-7 M5M44405CTP-7S M5M44405TP-7S M5M44405TP-6S M5M44405TP-5S M5M44405TP-7 M5M44405TP-6 M5M44405TP-5
OCR Text hyper PAGE MODE ) 4194304-BIT ( 1048576-WORD BY BY 4-BIT ) DYNAMIC RAM EDO ( hyper PAGE MODE ) 4194304-BIT ( 1048576-WORD 4-BIT ) DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high per...
Description EDO ( hyper PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC EDO ( hyper PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
File Size 242.91K  /  27 Page

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    K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J
OCR Text ... within the same row, so called hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional ...
Description 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
File Size 550.56K  /  35 Page

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    K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL
OCR Text ... Access time from CAS precharge hyper Page cycle time hyper Page read-modify-write cycle time CAS precharge time (hyper page cycle) RAS pulse width (hyper page cycle) RAS hold time from CAS precharge OE access time OE to data delay CAS prec...
Description 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
File Size 414.70K  /  21 Page

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    K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
OCR Text ... Access time from CAS precharge hyper Page cycle time hyper Page read-modify-write cycle time CAS precharge time (hyper page cycle) RAS pulse width (hyper page cycle) RAS hold time from CAS precharge OE access time OE to data delay CAS prec...
Description 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
File Size 415.47K  /  21 Page

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DigiKey

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