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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q68000-A7851 IRL80A IRL80
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| OCR Text |
...
Wesentliche Merkmale q GaAs-lumineszenzdiode im Infrarotbereich q Klares Miniaturkunststoffgehause, seitliche Abstrahlung q Preiswertes Kunststoffgehause q Lange Lebensdauer (Langzeitstabilitat) q Weiter Offnungskegel ( 30) q Passend zu... |
| Description |
GaAs-Infrarot-Sendediode GaAs Infrared Emitter
From old datasheet system
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| File Size |
122.81K /
3 Page |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
SFH4301 Q62702-P5166
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| OCR Text |
lumineszenzdiode (950 nm) im 3 mm Radial-Gehause High-Speed Infrared Emitter (950 nm) in 3 mm Radial Package SFH 4301
Wesentliche Merkmale * Hohe Pulsleistung und hoher Gesamtstrahlungsflu e * Sehr kurze Schaltzeiten (10 ns) * Sehr hohe ... |
| Description |
High-Speed Infrared Emitter (950 nm) in 3 mm Radial Package
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| File Size |
54.47K /
6 Page |
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it Online |
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Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH420 SFH425 Q62702-P0330 Q62702-P1690
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| OCR Text |
lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
3.0 2.6 2.3 2.1 2.1 1.7 0.1 (typ) 0.9 0.7
SFH 420 SFH 425
fpl06724 SFH 420 TOPLED(R)
3.4 3.0
2.4
0.8 0.6 Cathode/Collector marking Approx. weight 0.03 g
1... |
| Description |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
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| File Size |
47.50K /
5 Page |
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it Online |
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Infineon
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| Part No. |
SFH4110
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| OCR Text |
lumineszenzdiode (Mini Sidelooker) GaAs-Infrared Emitter (Mini Sidelooker)
Vorlaufige Daten / Preliminary Data
SFH 4110
R 0.9 R 0.7
0.5x45
Emitter/ Cathode 16.5 16.0 2.54 1.42 1.22 0.6 0.4
2.2 2.0 3.1 2.9
1.04 17.77 0.84 ... |
| Description |
GaAs-IR-lumineszenzdiode (Mini Sidelooker)
From old datasheet system
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| File Size |
48.64K /
4 Page |
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it Online |
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Osram Opto Semiconductors GmbH
OSRAM[OSRAM GmbH]
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| Part No. |
F2000D
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| OCR Text |
lumineszenzdiode (617nm, High Current and Flux) InGaAlP High Brightness LED (617nm, High Current and Flux) F 2000D
Vorlaufige Daten / Preliminary Data
Wesentliche Merkmale * Optimierte Lichtauskopplung durch Oberflachenstrukturierung un... |
| Description |
InGaAlP-High Brightness-lumineszenzdiode (617nm, High Current and Flux), InGaAlP High Brightness LED (617nm, High Current and Flux)
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| File Size |
211.09K /
6 Page |
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it Online |
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Price and Availability
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