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For methodology Found Datasheets File :: 1345    Search Time::1.297ms    
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    MMG3H21NT1

Freescale Semiconductor, Inc
Part No. MMG3H21NT1
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2008. All rights reserved. MMG3H21NT1 1 RF D...
Description Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier

File Size 277.49K  /  15 Page

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    MW7IC3825GNR1 MW7IC3825NBR1 MW7IC3825NR1 MW7IC3825NR110

Freescale Semiconductor, Inc
Part No. MW7IC3825GNR1 MW7IC3825NBR1 MW7IC3825NR1 MW7IC3825NR110
OCR Text ...protection characteristics test methodology class human body model (per jesd22--a114) 1b (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. moisture sensitivity level test...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 1,158.93K  /  23 Page

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    MRF8S7170N MRF8S7170NR3

Freescale Semiconductor, Inc
Part No. MRF8S7170N MRF8S7170NR3
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2010. All rights reserved. MRF8S7170NR3 1 RF...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 334.32K  /  13 Page

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    Motorola Semiconductor Products
Part No. MW7IC2040NR1
OCR Text ...protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iii (minimum) table 4. moisture sensitivity level ...
Description RF LDMOS Wideband Integrated

File Size 1,140.31K  /  29 Page

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    MMG3015NT1

Freescale Semiconductor, Inc
Part No. MMG3015NT1
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007-2008. All rights reserved. MMG3015NT1 1 ...
Description Heterojunction Bipolar Transistor Technology (InGaP HBT)

File Size 253.81K  /  15 Page

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    MMG3014NT108

Freescale Semiconductor, Inc
Part No. MMG3014NT108
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2008. All rights reserved. MMG3014NT1 1 RF D...
Description Heterojunction Bipolar Transistor Technology (InGaP HBT)

File Size 432.33K  /  17 Page

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    MMG3013NT108

Freescale Semiconductor, Inc
Part No. MMG3013NT108
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2005-2008. All rights reserved. MMG3013NT1 1 ...
Description Heterojunction Bipolar Transistor Technology (InGaP HBT)

File Size 302.08K  /  15 Page

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    MMG3011NT1

Freescale Semiconductor, Inc
Part No. MMG3011NT1
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2005-2008. All rights reserved. MMG3011NT1 1 ...
Description Heterojunction Bipolar Transistor (InGaP HBT)

File Size 295.21K  /  15 Page

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    MMG3010NT1 MMG3010NT108

Freescale Semiconductor, Inc
Part No. MMG3010NT1 MMG3010NT108
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2005-2008. All rights reserved. MMG3010NT1 1 ...
Description Heterojunction Bipolar Transistor (InGaP HBT)

File Size 298.21K  /  15 Page

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    MRF8S9170NR3

Freescale Semiconductor, Inc
Part No. MRF8S9170NR3
OCR Text ... to AN1955, Thermal Measurement methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2009. All rights reserved. MRF8S9170NR3 1 RF...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 261.81K  /  13 Page

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For methodology Found Datasheets File :: 1345    Search Time::1.297ms    
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