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Infineon
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Part No. |
BFP640
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OCR Text |
...pacitance v cb = 3 v, f = 1 mhz c cb - 0.09 0.2 pf collector emitter capacitance v ce = 3 v, f = 1 mhz c ce - 0.23 - emitter-base ca...3ghz 4ghz 5ghz 6ghz power gain g ma , g ms = ? ( f ), | s 21 |2 = f (f) v ce = 3v, i c = ... |
Description |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA
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File Size |
271.06K /
8 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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Part No. |
BFP540ESD
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OCR Text |
...se capacitance VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounde...3GHz Third order intercept point at output2) VCE = 2 V, I C = 20 mA, ZS = ZL = 50, f = 1.8GHz 1dB Co... |
Description |
NPN Silicon RF Transistor
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File Size |
224.54K /
9 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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