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  to-236mod Datasheet PDF File

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    SSM3K02F

Toshiba Corporation
Toshiba, Corp.
Toshiba Semiconductor
Part No. SSM3K02F
OCR Text ...t V V JEDEC JEITA TOSHIBA to-236mod SC-59 2-3F1F Weight: 0.012 g (typ.) Marking Equivalent Circuit Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the envi...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 东芝场效应晶体管频道马鞍山类
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications

File Size 144.88K  /  5 Page

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    TOSHIBA
Part No. 1SS187
OCR Text ... EIAJ TOSHIBA Weight: 0.012g to-236mod SC-59 1-3G1D Electrical Characteristics Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance Reverse recovery tme IR (1) IR (2) CT trr Test Circuit ...
Description Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application

File Size 120.01K  /  4 Page

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    TOSHIBA
Part No. 1SS190
OCR Text ... EIAJ TOSHIBA Weight: 0.012g to-236mod SC-59 1-3G1C Electrical Characteristics Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance Reverse recovery time IR (1) IR (2) CT trr Test Circuit ...
Description Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application

File Size 117.49K  /  4 Page

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    TOSHIBA
Part No. 1SS196
OCR Text ... EIAJ TOSHIBA Weight: 0.012g to-236mod SC-59 1-3G1B Electrical Characteristics (Ta = 25C) Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance Reverse recovery time IR (1) IR (2) CT trr Test C...
Description Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application

File Size 116.28K  /  4 Page

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    TOSHIBA
Part No. 1SS398
OCR Text ... EIAJ TOSHIBA Weight: 0.012g to-236mod SC-59 1-3G1G Electrical Characteristics (Ta = 25C) Characteristic Forward voltage Symbol VF (1) VF (2) Reverse current Total capacitance Reverse recovery time IR (1) IR (2) CT trr Test Circuit ...
Description Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications

File Size 138.76K  /  5 Page

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    TOSHIBA
Part No. 2SC3325
OCR Text ...VCEO = 50 V (min) Complementary to 2SA1313 Small package Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Coll...236MOD SC-59 2-3F1A Weight: 0.012 g (typ.) Marking 1 2003-03-27 2SC3325 Electrical C...
Description Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching App

File Size 90.55K  /  5 Page

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    TOSHIBA
Part No. 2SJ345
OCR Text ...eed Small package Complementary to 2SK1828 Unit: mm Marking Equivalent Circuit Maximum Ratings (Ta = 25C) Characteristics Drain-so...236MOD SC-59 2-3F1F Weight: 0.012 g (typ.) Electrical Characteristics (Ta = 25C) Characterist...
Description Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Applications

File Size 138.68K  /  6 Page

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    TOSHIBA
Part No. 1SS396
OCR Text ... EIAJ TOSHIBA Weight: 0.012g to-236mod SC-59 1-3G1G Electrical Characteristics (Ta = 25C) Characteristic Symbol VF (1) Forward voltage VF (2) VF (3) Reverse current Total capacitance IR CT Test Circuit Test Condition IF = 1mA IF...
Description Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching

File Size 116.65K  /  4 Page

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