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  -21a Datasheet PDF File

For -21a Found Datasheets File :: 62+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 |   

    1130-4R7M-RC 1130-1R2M-RC 1130-6R8M-RC 1130-100K-RC 1130-101K-RC 1130-120K-RC 1130-121K-RC 1130-151K-RC 1130-150K-RC 113

BOURNS INC
Bourns Electronic Solutions
Part No. 1130-4R7M-RC 1130-1R2M-RC 1130-6R8M-RC 1130-100K-RC 1130-101K-RC 1130-120K-RC 1130-121K-RC 1130-151K-RC 1130-150K-RC 1130-122K-RC 1130-180K-RC 1130-181K-RC 1130-182K-RC 1130-1R0M-RC 1130-1R5M-RC 1130-1R8M-RC 1130-220K-RC 1130-221K-RC 1130-222K-RC 1130-270K-RC 1130-271K-RC 1130-2R7M-RC 1130-2R2M-RC 1130-330K-RC 1130-331K-RC 1130-390K-RC 1130-332K-RC 1130-391K-RC 1130-392K-RC
Description RF Choke; Series:1130; Inductance:4.7uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1130; Inductance:1.2uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1130; Inductance:6.8uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.004ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
High Current Chokes Very high current capacity Fixed lead spacing

File Size 465.60K  /  1 Page

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    INFINEON[Infineon Technologies AG]
Part No. BUZ30ASMD
Description Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.13 Ohm, 21A, NL
SIPMOS Power Transistor

File Size 1,237.86K  /  8 Page

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    BOURNS INC
Part No. 1130-6R8M 1130-560K 1130-1R0M
Description Leaded Choke; Series:1130; Inductance:6.8uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.004ohm; Leaded Process Compatible:No
1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Leaded Choke; Series:1130; Inductance:1uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:21A; DC Resistance Max:0.003ohm; Leaded Process Compatible:No

File Size 102.22K  /  1 Page

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    INFINEON[Infineon Technologies AG]
Part No. BUZ30A BUZ30AC67078-S1303A3
Description Door actuator driver
SIPMOS Power Transistor
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.13 Ohm, 21A, NL

File Size 109.60K  /  8 Page

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    SCHURTER INC
Part No. 4789.1100
Description IEC Power Connector; Voltage Rating:250V; Mounting Type:Cable; Current Rating:21A; Body Material:Thermoplastic RoHS Compliant: Yes

File Size 266.71K  /  2 Page

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    DOW-KEY MICROWAVE CORP
Part No. 531JY-431103A
Description RF COAXIAL RELAY, SP3T, LATCHED, 0.21A (COIL), 28VDC (COIL), 5880mW (COIL), 40000MHz, 30W (RF INPUT), PANEL MOUNT

File Size 148.88K  /  3 Page

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    DOW-KEY MICROWAVE CORP
Part No. 521Y-481103A
Description RF COAXIAL RELAY, SPDT, LATCHED, 0.21A (COIL), 24VDC (COIL), 5040mW (COIL), 40000MHz, 15W (RF INPUT), PANEL MOUNT

File Size 128.84K  /  3 Page

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    Advanced Power Technology Ltd.
Part No. APT10050LLC APT10050B2LC
Description POWER MOS VI 1000V 21A 0.500 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage

File Size 68.29K  /  2 Page

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    APT5022AVR

ADPOW[Advanced Power Technology]
Part No. APT5022AVR
Description POWER MOS V 500V 21A 0.220 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.67K  /  4 Page

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    APT6030 APT6030BVFR

ADPOW[Advanced Power Technology]
Part No. APT6030 APT6030BVFR
Description POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.94K  /  4 Page

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