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30-c13 Datasheet PDF File

For 30-c13 Found Datasheets File :: 4099 Search Time::1.25ms
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				INFINEON[Infineon Technologies AG] Infineon Technologies A...
Part No.	08090 PTF080901 PTF080901E PTF080901F 8090
OCR Text	...Hz 0 55 Efficiency 50 45 40 35 30 400 kHz 25 20 600 kHz 36 38 40 42 44 46 48 50 15 10 -10 -20 -30 -40 -50 -60 -70 -80 -90 * Modulatio...C13 1.4pF l10 l11 C14 0.5pF RF_OUT l8 L2 C16 33pF C17 1F + C18 10F 35V C19 0.1F...
Description	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W 869-960 MHz LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
File Size	201.97K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA260451E
OCR Text	... = 500 ma, ? = 2680 mhz 0 10 20 30 40 50 60 25 30 35 40 45 50 output power, avg. (dbm) drain efficiency (%) -70 -65 -60 -55 -50 -45 -40 adj....c13 l 9 1f c17 dut c6 4.7pf v v 10 r8 l 4 l 8 4.7pf c9 1f l 14 l 13 10f 50v c16 c18 1.2pf l2 c15 .1f...
Description	Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
File Size	217.81K / 10 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc] MOTOROLA
Part No.	MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P27160HR6 MRF6P27160HR606 MRF6P27160H06
OCR Text	...885 kHz Offset -- - 47.8 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW Output Power Features * C...C13 RF OUTPUT Z32 Z33 DUT VSUPPLY Z17 Z19 Z21 Z23 Z25 Z27 Z29 Z3 RF INPUT Z1 Z2 C2 C1 Z5 ...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
File Size	483.58K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA240451E
OCR Text	...a, ? = 2450 mhz 0 5 10 15 20 25 30 35 40 45 30 32 34 36 38 40 42 output power, avg. (dbm) drain efficiency (%) -74 -70 -66 -62 -58 -54 -50 -...c13 .1f l1 c14 10f 50v v dd c16 1f l 12 rf_in c9 4.5pf l 1 l 2 c10 1.8pf l 3 dut l 5 l 6 l 7 c15 4.5...
Description	Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz
File Size	189.16K / 10 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6P24190HR6
OCR Text	...sfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc ...C13 B4 C8 C22 C23 C24 C25 C26 C6 + C28 C14 B3 Z29 Z19 Z21 Z23 C1 DUT Z7 Z9 Z11 Z13 Z6 Z8 Z10 C5 Z14 ...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	359.17K / 9 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6P23190HR6
OCR Text	...sfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc V...C13 B4 C8 C22 C23 C24 C25 C26 C6 + C28 B3 Z20 Z18 Z22 Z24 C1 DUT Z6 Z8 Z10 Z12 Z5 Z7 Z9 C5 Z13 Z11 C...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	425.45K / 11 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF5S9101NR1 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
OCR Text	...tput Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0...C13 Z2 C14 Z3 Z4 Z5 Z6 RF OUTPUT C8 C5 C2 + C21 VSUPPLY Z12 C9 C6 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z...
Description	RF Power Field Effect Transistors
File Size	533.41K / 20 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA211001E
OCR Text	...2008-03-04 -55 -50 -45 -40 -35 -30 34 36 38 40 42 44 46 average output power (dbm) adjacent channel power ratio (dbm) two-carrier wcdma at v...c13 c19 c20 c9 c18 c17 c16 c15 l 11 l 12 l 6 l 13 l 2 1f c6 0.1f c5 r6 5.1k v 10 f 35v c4 5.1k v r7 ...
Description	Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
File Size	215.46K / 9 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF5S9100NR1 MRF5S9100MBR1 MRF5S9100MR1 MRF5S9100NBR1
OCR Text	...750 kHz Offset -- - 46.8 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW Output Power Features * Ch...C13 C6 RF INPUT DUT Z1 C1 Z2 Z3 C2 Z4 C3 Z5 C4 Z6 Z7 C5 Z8 Z9 C8 Z10 Z11 Z12 C10 Z13 Z14 C1...
Description	N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors
File Size	516.79K / 16 Page	View it Online	Download Datasheet

				Freescale (Motorola) MOTOROLA[Motorola, Inc]
Part No.	MRF5S9070NR1
OCR Text	... -- 17.8 dB Drain Efficiency -- 30% ACPR @ 750 kHz Offset -- - 47 dBc @ 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz,...C13 C12 Z12 C14 Z13 Z14 C15 Z15 C16 C17 Z16 RF OUTPUT B1 C8 + C9 C10 C22 C19 + C20 + C21 R4 Z1 Z2...
Description	880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET RF Power Field Effect Transistors
File Size	444.63K / 12 Page	View it Online	Download Datasheet

For 30-c13 Found Datasheets File :: 4099 Search Time::1.25ms
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