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AMI[AMI SEMICONDUCTOR]
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| Part No. |
AMIS-720639
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| OCR Text |
...lement spacing is approximately 42m. The size of each chip without the scribe lines is 8080m by 360m and each sensor chip has six bonding pads. The pad symbols and functions are described in Table 1.
Table 1: Pad Symbols and Functions Symb... |
| Description |
600dpi CIS Sensor Chip
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| File Size |
285.82K /
10 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4611L AO4611
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| OCR Text |
...0V -4.9A (VGS = -10V) RDS(ON) < 42m (VGS = -10V) < 52m (VGS = -4.5V)
D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
G2 S2
G1 S1
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings TA=25C unless otherwise noted Paramet... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
159.31K /
7 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4700L AO4700
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| OCR Text |
...ON) < 28m (VGS = 10V) RDS(ON) < 42m (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 4A, VF<0.5V@3A
K
G S A
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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| File Size |
118.67K /
5 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4812L AO4812
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| OCR Text |
...ON) < 28m (VGS = 10V) RDS(ON) < 42m (VGS = 4.5V)
D1 S2 G2 S1 G1 D2 D2 D1 D1
D2
1 2 3 4
8 7 6 5
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
108.41K /
4 Page |
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Alpha & Omega Semicondu...
AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO8403L AO8403
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| OCR Text |
... = -4 A (VGS = -4.5V) RDS(ON) < 42m (VGS = -4.5V) RDS(ON) < 52m (VGS = -2.5V) RDS(ON) < 70m (VGS = -1.8V) ESD Rating: 3000V HBM
TSSOP-8 Top View D S S G 1 2 3 4 8 7 6 5 D S S D G
D
S
Absolute Maximum Ratings TA=25C unless otherw... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
101.88K /
4 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AOP606L AOP606
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| OCR Text |
...S(ON) RDS(ON) < 25m (VGS=10V) < 42m (VGS = -10V) < 30m (VGS=4.5V) < 52m (VGS = -4.5V)
D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D1
G2 S2
G1 S1
PDIP-8
n-channel
p-channel
Absolute Maximum Ratings TA=25C unless otherw... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
208.55K /
7 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AOP610L AOP610
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| OCR Text |
...(VGS=10V) < 37m (VGS = -10V) < 42m (VGS=4.5V) < 60m (VGS = -4.5V) ESD rating: 1500V (HBM)
PDIP-8
S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1
D2
D1 K2 G1 A2
N-ch P-ch
G2
S2
S1
n-channel Absolute Maximum Ratings T... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
138.17K /
7 Page |
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Sumida, Corp.
SUMIDA[Sumida Corporation]
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| Part No. |
CDRH4D28C CDRH4D28CNP100NB CDRH4D28CNP100NC
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| OCR Text |
...(110.0m) 1.05 106m( 85.0m) 1.26 42m( 33.3m) 2.3 29m( 23.0m) 2.6 22m( 17.5m) 3.8 D.C.R.( ) : Max.(Typ.) Temperature Rise Rated Current (A) * 3
Measuring Freq. (L) / L CDRH4D28C 100 kHz Tolerance of Inductance / CDRH4D28C 1.1 H - 100 H... |
| Description |
1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD ROHS COMPLIANT
POWER INDUCTORS (SMD Type)
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| File Size |
213.95K /
1 Page |
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Download Datasheet |
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Price and Availability
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