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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX2825 MAX2825EVKIT MAX2826 MAX2826EVKIT MAX2827 MAX2827EVKIT
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| OCR Text |
...1 x 3 headers Sullins PTC36SAAN 6.8nH 5% 0402 inductor Murata LQG15HN6R8J00 Open 3.9nH 0.2nH 0402 inductor Murata LQP15MN3N9C00 75 1% 0402 r...C19, C20, C23-C28, C30, C32, C36, C38, C41, C56, C57, C58 C14, C15 C33, C34 QTY 1 DESCRIPTION 0.75pF... |
| Description |
MAX2825/MAX2826/MAX2827 Evaluation Kits
MAX2825/MAX2826/MAX2827 Evaluation Kits
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| File Size |
1,011.40K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6P9220HR3
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| OCR Text |
...dB) 20.1 19.8 19.5 19.2 18.9 18.6 18.3 18 850 ALT1 860 870 880 890 900 IRL ACPR VDD = 28 Vdc, Pout = 47 W (Avg.) IDQ = 1600 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Gps D 31 30 29 28 27 -45 -50 -55 -60 -65 -70 910
... |
| Description |
880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET
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| File Size |
431.30K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6P9220HR3_06 MRF6P9220HR3 MRF6P9220HR306
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| OCR Text |
...dB) 20.1 19.8 19.5 19.2 18.9 18.6 18.3 18 850 860 870 880 890 900 f, FREQUENCY (MHz) ALT1 IRL ACPR VDD = 28 Vdc, Pout = 47 W (Avg.) IDQ = 1600 mA, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Gps D 31 30 29 28 27 -45 -50 -... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
494.89K /
12 Page |
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it Online |
Download Datasheet |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6P3300HR5 MRF6P3300H MRF6P3300HR3 MRF6P3300HR3_06
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| OCR Text |
... 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing 100 Pout, OUTPUT POWER (WATTS) PEP 600 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) ...C19 C17 C15
Z25
Z21 +
COAX8 VSUPPLY C25
C23
Z1, Z26 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, ... |
| Description |
RF Power Field Effect Transistor
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| File Size |
998.42K /
24 Page |
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it Online |
Download Datasheet |
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Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6P27160HR6
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| OCR Text |
...ility on CCDF. Power Gain -- 14.6 dB Drain Efficiency -- 22.6% ACPR @ 885 kHz Offset -- - 47.8 dBc @ 30 kHz Bandwidth * Capable of Handling ...C19 Z31 C13 RF OUTPUT Z32 Z33 DUT VSUPPLY
Z17 Z19 Z21 Z23 Z25 Z27 Z29
Z3 RF INPUT Z1 Z2 C2 C1
... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管N沟道增强型MOSFET的侧
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| File Size |
440.42K /
12 Page |
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SAMTEC INC
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| Part No. |
QSS-016-01-H-D-DP-RA
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| OCR Text |
...air see table 2 .250 ref (typ) 6.35 ((no of pos / 16) x .7875[20.003]) + .550[13.97] .560 14.22 ref .280 7.11 ref .006 ref 0.15 ((no of po...c19-a-ve detail "a" scale 4 : 1 not filled not filled (see note 9) 01 02 not filled (see note 9) c ... |
| Description |
32 CONTACT(S), FEMALE, RIGHT ANGLE TWO PART BOARD CONNECTOR, SURFACE MOUNT, SOCKET
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| File Size |
413.98K /
4 Page |
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FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
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| Part No. |
MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P27160HR6 MRF6P27160HR606 MRF6P27160H06
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| OCR Text |
...ility on CCDF. Power Gain -- 14.6 dB Drain Efficiency -- 22.6% ACPR @ 885 kHz Offset -- - 47.8 dBc in 30 kHz Bandwidth * Capable of Handling...C19 Z31 C13 RF OUTPUT Z32 Z33 DUT VSUPPLY
Z17 Z19 Z21 Z23 Z25 Z27 Z29
Z3 RF INPUT Z1 Z2 C2 C1
... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
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| File Size |
483.58K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6P24190HR6
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| OCR Text |
...Beads 5.1 pF, Chip Capacitors 5.6 pF, Chip Capacitors 0.01 F, 100 V Chip Capacitors 2.2 F, 50 V Chip Capacitors 22 F, 25 V Tantalum Capacito...C19 C7
C3 C1 CUT OUT AREA C2 C4
MRF6P24190H Rev. 1.0
C6 B3 B4
C8
C22 C23 C24 R2 C16 C... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
359.17K /
9 Page |
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it Online |
Download Datasheet |
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