... screw (isolated mounting screw hole) Space savings High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
94503C(5/96)
IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-...
... screw (isolated mounting screw hole) Space savings High power density
V GS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2%
(c) 2002 IXYS All rights reserved
98877A (02/02)
IXTK 62N25
Symbol Test Conditions (T J =...
...O-247) (isolated mounting screw hole) Space savings High power density
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IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
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21N50 24N50 Pulse test, t 300 s, duty...
...O-247) (isolated mounting screw hole) Space savings High power density
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IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
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5N100 5N100A Pulse test, t 300 s, dut...
Description
Discrete MOSFETs: Standard N-channel Types Standard Power MOSFET
...O-247) (isolated mounting screw hole) Space savings High power density
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IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
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67N10 75N10 Pulse test, t 300 s, duty...
Description
MegaMOSFET Receiver IC; Supply Voltage:5V; Package/Case:28-SOIC; Interface Type:Serial; Leaded Process Compatible:No; No. of Channels:7; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5V; Mounting Type:Surface Mount RoHS Compliant: No Receiver IC; Package/Case:28-TSSOP; Current Rating:2.8mA; Interface Type:Serial; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5V; Mounting Type:Surface Mount; Voltage Rating:3.3V RoHS Compliant: No 32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Memory Size, RAM:16MB; No. of I/O Pins:24; No. of PWM Channels:1; Clock Speed:200MHz; Interface:AC97, I2S, SPI, UART, USB; Package/Case:208-LQFP; A/D Converter:12 Bits RoHS Compliant: Yes IC ARM920T MCU 200MHZ 272-TFBGA 1000V HiPerFET power MOSFET
...r TO 247 with isolated Mounting hole
MTW33N10E
Motorola Preferred Device
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy ef...
Description
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE From old datasheet system