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  isoplus Datasheet PDF File

For isoplus Found Datasheets File :: 250    Search Time::1.89ms    
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    CPC192710

Clare, Inc.
Part No. CPC192710
OCR Text ...tching applications. the unique isoplus-264 package pioneered by ixys enables solid state relays to achieve the highest load current and power ratings. this package features a unique ixys process where the silicon chips are soft soldere...
Description isoplus?264 Power Relay

File Size 885.38K  /  7 Page

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    IXYS
Part No. DHG60U1200LB
OCR Text ...erruptible power supplies (ups) isoplus-smpd ixys reserves the right to change limits, conditions and dimensions. 20110722 data according to iec 60747and per diode unless otherwise specified ? 2011 ixys all rights reserved http://www.datas...
Description Sonic Fast Recovery Diode

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    IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXFX27N80Q IXFK27N80Q IXFR27N80Q
OCR Text ... AA (IXFK) G D S (TAB) isoplus 247TM (IXFR) E153432 G D Isolated back surface* G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247/isoplus 247 TO-264 0.4/6 ...
Description HiPerFET Power MOSFETs Q-CLASS 27 A, 800 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA

File Size 54.76K  /  2 Page

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    IXFE80N50

IXYS Corporation
Part No. IXFE80N50
OCR Text ...... +150 2500 3000 V V V V A isoplus 227TM (IXFE) S G S A A mJ J V/ns W C C C V~ V~ Features G = Gate S = Source D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source *Conforms to SOT-227B...
Description HiPerFET Power MOSFETs Single Die MOSFET

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    IXFFB24N100

IXYS Corporation
Part No. IXFFB24N100
OCR Text isoplus I4-PACTM 1 5 MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 dv/dt EAR Symbol TC = 25C TC = 90C (diode) TC = 25C (diode) TC = 90C VDS < VDSS; IF 100A;odiF/dto 100A/s; RG = 2 W TVJ = 150C TC = 25C Conditions Conditions TVJ = 25C t...
Description
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    IXFRB24N50Q IXFR24N50Q IXFR26N50Q

IXYS Corporation
Part No. IXFRB24N50Q IXFR24N50Q IXFR26N50Q
OCR Text ...A A mJ J V/ns W C C C C V~ g isoplus 247TM E153432 G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab 300 2500 5...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS isoplus247 (ELECTRICALLY ISOLATED BACK SURFACE)

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    IXFR24N50 IXFR26N50

IXYS Corporation
Part No. IXFR24N50 IXFR26N50
OCR Text ... V V V V A A A A A A mJ V/ns isoplus 247TM G D Isolated back surface* G = Gate S = Source * Patent pending D = Drain Features W C C C C V~ g * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isol...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS isoplus247 (ELECTRICALLY ISOLATED BACK SURFACE)

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    IXLF19N250A

IXYS Corporation
Part No. IXLF19N250A
OCR Text isoplus i4-PACTM IC25 = 32 A VCES = 2500 V VCE(sat) = 3.2 V tf = 250 ns 5 1 1 2 2 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25C TC = 90C VGE = 15 V; RG = 47 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H TC = 25C Cond...
Description Low Saturation Voltage Types
High Voltage IGBT

File Size 64.36K  /  4 Page

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    IXYS
Part No. FSS100-008A
OCR Text isoplus i4-pac tm advanced technical information fss 100-008a data according to iec 60747 and refer to a single diode unless otherwise stated. ixys reserves the right to change limits, test conditions and dimensions. features ? schottky dio...
Description Silicon Schottky Diodes

File Size 28.22K  /  2 Page

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    IXFE55N50 IXFE50N50

IXYS Corporation
Part No. IXFE55N50 IXFE50N50
OCR Text ... 52 A 500 V 47 A trr 250 ns isoplus 227TM (IXFE) Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Contin...
Description HiPerFETTM Power MOSFET

File Size 423.49K  /  2 Page

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