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  ms s Datasheet PDF File

For ms s Found Datasheets File :: 101925    Search Time::1.562ms    
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    2SB1048

HITACHI[Hitachi Semiconductor]
Part No. 2sB1048
OCR Text ...V A A W C C Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) Electrical Characteristics...s 0.8 -1.0 -0.3 -0.1 -0.03 -0.01 -3 = 10 s ms Ta = 25C 1 shot Pulse 0.4 0...
Description silicon PNP Epitaxial/ Darlington
silicon PNP Epitaxial, Darlington

File Size 31.00K  /  6 Page

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    2SB1072 2SB1072L 2SB1072S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2sB1072 2sB1072L 2sB1072s
OCR Text ...ent IC (A) iC(peak) 1 s s 0 1 ms 10 Area of safe Operation 20 -3 IC(max) PW -1.0 DC =1 0m (T C 10 -0.3 -0.1 -0.03 Ta = 25C 1 shot Pulse s ) =2 C 5 0 50 100 Case temperature TC (C) 150 -1 -2 -...
Description silicon PNP Triple Diffused 三重扩散硅进步党

File Size 34.72K  /  6 Page

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    2SB1079

HITACHI[Hitachi Semiconductor]
Part No. 2sB1079
OCR Text .../W) 3 0.1-100 s 1.0 0.3 0.1-100 ms 0.1 0.03 0.01 0.1 0.1 TC = 25C 1 shot 1.0 1.0 Time t 10 10 100 (s) 100 (ms) 4 Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 ...
Description silicon PNP Triple Diffused

File Size 35.32K  /  6 Page

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    2SB1091

HITACHI[Hitachi Semiconductor]
Part No. 2sB1091
OCR Text ... resistance j-c (C/W) 30 10 100 ms-10 s 3 1.0 0.3 TC = 25C 0.1 0.1 1.0 1.0 10 Time t 10 (s) 100 (ms) 1 ms-100 ms 4 Unit: mm 11.5 MAX 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08 +0.1 4.44 0.2 1.26 0.15 6.4 +0.2 -0.1 18.5 ...
Description silicon PNP Triple Diffused

File Size 34.50K  /  6 Page

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    2SB1103

HITACHI[Hitachi Semiconductor]
Part No. 2sB1103
OCR Text ...Time t 100 100 1,000 (s) 1,000 (ms) TC = 25C 1 s-1,000 s 1 ms-1 s 5 Unit: mm 11.5 MAX 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08 +0.1 4.44 0.2 1.26 0.15 6.4 +0.2 -0.1 18.5 0.5 15.0 0.3 1.27 2.7 MAX 14.0 0.5 ...
Description silicon PNP Darlington Transistor
silicon PNP Triple Diffused

File Size 35.86K  /  7 Page

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    2SB1181 2SB1260 2SB1241

ROHM[Rohm]
Part No. 2sB1181 2sB1260 2sB1241
OCR Text ... PW 200 100 50 s 0 =1 ms m 00 =1 PW 00 DC m s s -0.2 -0.1 -0.05 -0.5 -1 -2 20 10 -0.1 -0.2 *Printed circuit board: -0.5 -1 -2 -5 -10 -5 -10 -20 -50 -100 2m 2 1m copper plating a...
Description Power Transistor

File Size 78.57K  /  3 Page

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    2SB727 2SB727K

HITACHI[Hitachi Semiconductor]
Part No. 2sB727 2sB727K
OCR Text ... 10 0 40 s -3 s ms n 1 m= 10 tio era PW Op C) DC = 25 (T C -1.0 -0.3 Ta = 25C -0.1 1 shot pulse -0.03 -1 20 0 50 100 Case Temperature TC (C) 150 -3 -10 -30 -100 -300 -1,000 Collector to emitter Voltage VCE ...
Description silicon PNP Epitaxial

File Size 36.22K  /  6 Page

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    2SB772 B772 UTC2SB772

友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2sB772 B772 UTC2sB772
OCR Text ...a Ic(max),Pulse Ic(max),DC 10 ms 1m s s 1m 0. Output Capacitance(pF) FT(MHz), Current gainbandwidth product 2 10 IE=0 f=1MHz VCE=5V 2 10 -Ic,Collector current(A) 10 0 IB=8mA 1 10 1 10 -1 10 0 10 10...
Description MEDIUM POWER LOW VOLTAGE TRANsIsTOR
PNP EPITAXIAL sILICON TRANsIsTOR

File Size 45.29K  /  2 Page

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    2SB791 2SB791K

HITACHI[Hitachi Semiconductor]
http://
Part No. 2sB791 2sB791K
OCR Text ...Time t 100 100 1,000 (s) 1,000 (ms) TC = 25C -1-1,000 s 1-1,000 ms 4 Unit: mm 11.5 MAX 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08 +0.1 4.44 0.2 1.26 0.15 6.4 +0.2 -0.1 18.5 0.5 15.0 0.3 1.27 2.7 MAX 14.0 0.5...
Description &nbsp;&nbsp;&nbsp;silicon PNP Epitaxial

File Size 36.18K  /  6 Page

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    2SB955 2SB955K

HITACHI[Hitachi Semiconductor]
Part No. 2sB955 2sB955K
OCR Text ...: 1. Value at TC = 25C 2. PW 1 ms 1 shot symbol VCBO VCEO VEBO IC I C(peak) ID* 1 2 Rating -120 -120 -7 -10 -15 10 50 150 -55 to +150 ...s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -200 mA, IC = 0 VCB = -120 V, IE = 0 VCE...
Description silicon PNP Triple Diffused

File Size 34.71K  /  6 Page

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For ms s Found Datasheets File :: 101925    Search Time::1.562ms    
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