TMOS E-FET High Energy Power FET n-channel Enhancement-Mode silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS From old datasheet system
TMOS E-FET High Energy Power FET n-channel Enhancement-Mode silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS From old datasheet system
TMOS E-FET High Energy Power FET n-channel Enhancement-Mode silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
TMOS E-FET High Energy Power FET n-channel Enhancement-Mode silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system